High reliability Siliup SP40P08ANJ 40V P Channel MOSFET with single pulse avalanche energy testing

Key Attributes
Model Number: SP40P08ANJ
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
36A
RDS(on):
8mΩ@10V;11mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
229pF
Number:
1 P-Channel
Output Capacitance(Coss):
309pF
Input Capacitance(Ciss):
4.012nF
Pd - Power Dissipation:
65W
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
SP40P08ANJ
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The SP40P08ANJ is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for efficient power management, this MOSFET features fast switching speeds and low on-resistance, making it ideal for applications such as DC-DC converters. It is 100% tested for single pulse avalanche energy, ensuring reliability in demanding conditions. The device is housed in a compact PDFN3X3-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP40P08ANJ
  • Device Code: 40P08A
  • Package: PDFN3X3-8L

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Breakdown Voltage (Drain-Source) V(BR)DSS -40 V
On-Resistance RDS(on)TYP @ -10V 8 m
On-Resistance RDS(on)TYP @ -4.5V 11 m
Continuous Drain Current ID -36 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25) -40 V
Gate-Source Voltage VGSS (Ta=25) 20 V
Continuous Drain Current ID (Tc=25C) -36 A
Continuous Drain Current ID (Tc=100C) -24 A
Pulse Drain Current IDM (Tested) -144 A
Single Pulse Avalanche Energy EAS 256 mJ
Power Dissipation PD (Tc=25C) 65 W
Thermal Resistance (Junction-to-Case) RJC 1.92 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -40 V
Drain-Source Leakage Current IDSS VDS=-32V , VGS=0V , TJ=25 -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.6 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID=-10A 8 10 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-8A 11 15 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-20V , VGS=0V , f=1MHz 4012 pF
Output Capacitance Coss 309 pF
Reverse Transfer Capacitance Crss 229 pF
Total Gate Charge Qg VDS=-20V , VGS=-10V , ID=-20A 31 nC
Gate-Source Charge Qgs 67 nC
Gate-Drain Charge Qgd 13.2 nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=-20V VGS=-10V , RG=3, ID=-10A 9.9 nS
Rise Time Tr 32 nS
Turn-Off Delay Time Td(off) 46 nS
Fall Time Tf 53 nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Maximum Body-Diode Continuous Current IS -36 A
Reverse recover time Trr IS=-20A, di/dt=-100A/us, Tj=25 25 nS
Reverse recovery charge Qrr 13 nC
PDFN3X3-8L Package Information
Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.650 0.850 0.026 0.033
A1 0.152 REF. 0.006 REF.
A2 0~0.05 0~0.002
D 2.900 3.100 0.114 0.122
D1 2.300 2.600 0.091 0.102
E 2.900 3.100 0.114 0.122
E1 3.150 3.450 0.124 0.136
E2 1.535 1.935 0.060 0.076
b 0.200 0.400 0.008 0.016
e 0.550 0.750 0.022 0.030
L 0.300 0.500 0.012 0.020
L1 0.180 0.480 0.007 0.019
L2 0~0.100 0~0.004
L3 0~0.100 0~0.004
H 0.315 0.515 0.012 0.020
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2504101957_Siliup-SP40P08ANJ_C41355039.pdf

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