High reliability Siliup SP40P08ANJ 40V P Channel MOSFET with single pulse avalanche energy testing
Product Overview
The SP40P08ANJ is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for efficient power management, this MOSFET features fast switching speeds and low on-resistance, making it ideal for applications such as DC-DC converters. It is 100% tested for single pulse avalanche energy, ensuring reliability in demanding conditions. The device is housed in a compact PDFN3X3-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40P08ANJ
- Device Code: 40P08A
- Package: PDFN3X3-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | -40 | V | |||
| On-Resistance | RDS(on)TYP | @ -10V | 8 | m | ||
| On-Resistance | RDS(on)TYP | @ -4.5V | 11 | m | ||
| Continuous Drain Current | ID | -36 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25) | -40 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25C) | -36 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | -24 | A | ||
| Pulse Drain Current | IDM | (Tested) | -144 | A | ||
| Single Pulse Avalanche Energy | EAS | 256 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 65 | W | ||
| Thermal Resistance (Junction-to-Case) | RJC | 1.92 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -40 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.6 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-10A | 8 | 10 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-8A | 11 | 15 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-20V , VGS=0V , f=1MHz | 4012 | pF | ||
| Output Capacitance | Coss | 309 | pF | |||
| Reverse Transfer Capacitance | Crss | 229 | pF | |||
| Total Gate Charge | Qg | VDS=-20V , VGS=-10V , ID=-20A | 31 | nC | ||
| Gate-Source Charge | Qgs | 67 | nC | |||
| Gate-Drain Charge | Qgd | 13.2 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-20V VGS=-10V , RG=3, ID=-10A | 9.9 | nS | ||
| Rise Time | Tr | 32 | nS | |||
| Turn-Off Delay Time | Td(off) | 46 | nS | |||
| Fall Time | Tf | 53 | nS | |||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -36 | A | |||
| Reverse recover time | Trr | IS=-20A, di/dt=-100A/us, Tj=25 | 25 | nS | ||
| Reverse recovery charge | Qrr | 13 | nC | |||
| PDFN3X3-8L Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 0.650 | 0.850 | 0.026 | 0.033 |
| A1 | 0.152 REF. | 0.006 REF. | ||
| A2 | 0~0.05 | 0~0.002 | ||
| D | 2.900 | 3.100 | 0.114 | 0.122 |
| D1 | 2.300 | 2.600 | 0.091 | 0.102 |
| E | 2.900 | 3.100 | 0.114 | 0.122 |
| E1 | 3.150 | 3.450 | 0.124 | 0.136 |
| E2 | 1.535 | 1.935 | 0.060 | 0.076 |
| b | 0.200 | 0.400 | 0.008 | 0.016 |
| e | 0.550 | 0.750 | 0.022 | 0.030 |
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | 0.180 | 0.480 | 0.007 | 0.019 |
| L2 | 0~0.100 | 0~0.004 | ||
| L3 | 0~0.100 | 0~0.004 | ||
| H | 0.315 | 0.515 | 0.012 | 0.020 |
| 9 | 13 | 9 | 13 | |
2504101957_Siliup-SP40P08ANJ_C41355039.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.