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quality Low RDS on N Channel MOSFET Siliup SP011N02GHTO 110V Rated for High Frequency and Power Management Applications factory
quality Low RDS on N Channel MOSFET Siliup SP011N02GHTO 110V Rated for High Frequency and Power Management Applications factory

Low RDS on N Channel MOSFET Siliup SP011N02GHTO 110V Rated for High Frequency and Power Management Applications

Key Attributes
Model Number: SP011N02GHTO
Product Custom Attributes
Drain To Source Voltage:
110V
Configuration:
-
Current - Continuous Drain(Id):
260A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 N-channel
Output Capacitance(Coss):
1.608nF
Input Capacitance(Ciss):
9.625nF
Pd - Power Dissipation:
280W
Gate Charge(Qg):
160nC@10V
Mfr. Part #:
SP011N02GHTO
Package:
TOLL-8
Product Description

Product Overview

The SP011N02GHTO is a 110V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is designed for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is available in a TOLL package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP011N02GHTO
  • Channel Type: N-Channel
  • Package: TOLL
  • Technology: Advanced Split Gate Trench Technology
  • Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter Symbol Rating Unit Test Condition
Drain-Source Voltage VDS 110 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID 260 A
Continuous Drain Current (Tc=100) ID 175 A
Pulsed Drain Current IDM 1040 A
Single Pulse Avalanche Energy EAS 1560 mJ VDD=50V,VGS=10V,L=0.5mH,RG=25
Power Dissipation (Tc=25) PD 280 W
Thermal Resistance Junction-to-Case RJC 0.45 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Drain-Source Breakdown Voltage BVDSS 110 (Typ: 120) V ID = 250A, VGS = 0V
Drain Cut-Off Current IDSS 1 A VDS = 80V, VGS = 0V
Gate Leakage Current IGSS 0.1 A VGS = 20V, VDS = 0V
Gate Threshold Voltage VGS(th) 2.0 (Typ: 3.0, Max: 4) V VDS = VGS, ID = 250A
Drain-Source ON Resistance RDS(ON) 2 (Typ: 2.5) m VGS = 10V, ID = 20A
Input Capacitance Ciss 9625 (Typ) pF VDS =50V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 1608 (Typ) pF
Reverse Transfer Capacitance Crss 75 (Typ) pF
Total Gate Charge Qg 160 (Typ) nC VDS=50V , VGS=10V , ID=20A
Gate-Source Charge Qgs 31 (Typ) nC
Gate-Drain Charge Qg d 37 (Typ) nC
Turn-On Delay Time td(on) 35 (Typ) nS VGS = 10V, VDS = 50V, RL=2.5 RG = 6.0
Rise Time tr 68 (Typ) nS
Turn-Off Delay Time td(off) 150 (Typ) nS
Fall Time tf 105 (Typ) nS
Source-Drain Diode Forward Voltage VSD 1.2 (Typ) V IS = 1A, VGS = 0V
Maximum Body-Diode Continuous Current IS 260 A
Reverse Recovery Time Trr 97 (Typ) nS TJ = 25C, IF = 100A di/dt = 100A/us
Reverse Recovery Charge Qrr 228 (Typ) nC

TOLL Package Dimensions (mm):

Symbol Min. Nom. Max.
A 2.20 2.30 2.40
b 0.65 0.75 0.85
C 0.508 - -
D 10.25 10.40 10.55
D1 2.85 3.00 3.15
E 9.75 9.90 10.05
E1 9.65 9.80 9.95
E2 8.95 9.10 9.25
E3 7.25 7.40 7.55
e 1.20 BSC - -
F 1.05 1.20 1.35
H 11.55 11.70 11.85
H1 6.03 6.18 6.33
H2 6.85 7.00 7.15
H3 3.00 BSC - -
L 1.55 1.70 1.85
L1 0.55 0.7 0.85
L2 0.45 0.6 0.75
M 0.08 REF. - -
8 10 12
K 4.25 4.40 4.55

2504101957_Siliup-SP011N02GHTO_C42372361.pdf

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