Surface Mount 60V MOSFET Siliup SP60N1K5KDTL Featuring Dual N Channel and 2KV ESD Protection for Power Applications
Key Attributes
Model Number:
SP60N1K5KDTL
Product Custom Attributes
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
220mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Number:
-
Output Capacitance(Coss):
6pF
Pd - Power Dissipation:
320mW
Input Capacitance(Ciss):
12pF
Gate Charge(Qg):
1.34nC@15V
Mfr. Part #:
SP60N1K5KDTL
Package:
SOT-563
Product Description
Product Overview
The SP60N1K5KDTL is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device features ESD protection up to 2KV. Its applications include battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 15K
- Package: SOT-563
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (V(BR)DSS) | V(BR)DSS | 60 | V | |||
| On-Resistance (RDS(on)) | RDS(on) | @10V | 1.5 | |||
| On-Resistance (RDS(on)) | RDS(on) | @4.5V | 1.8 | |||
| Continuous Drain Current (ID) | ID | 220 | mA | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 220 | mA | |||
| Pulse Drain Current | IDM | Tested | 880 | mA | ||
| Power Dissipation | PD | 320 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 390 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.7 | 1.0 | 1.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =200mA | - | 1.5 | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =200mA | - | 1.8 | 4 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =2.5V, ID =100mA | - | 2.5 | 8 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 12 | - | pF |
| Output Capacitance | Coss | - | 6 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 2.5 | - | pF | |
| Total Gate Charge | Qg | VDS=10V , VGS=15V , ID=1A | - | 1.34 | - | nC |
| Gate-Source Charge | Qgs | - | 0.29 | - | ||
| Gate-Drain Charge | Qg | - | 0.2 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=2.3 , ID=1A | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | 18 | - | ||
| Turn-Off Delay Time | td(off) | - | 8 | - | ||
| Turn-Off Fall Time | tf | - | 14 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-563) | ||||||
| Dimension A | 0.525 | 0.600 | mm | |||
| Dimension A1 | 0.000 | 0.050 | mm | |||
| Dimension e | 0.450 | 0.550 | mm | |||
| Dimension c | 0.090 | 0.160 | mm | |||
| Dimension D | 1.500 | 1.700 | mm | |||
| Dimension b | 0.170 | 0.270 | mm | |||
| Dimension E1 | 1.100 | 1.300 | mm | |||
| Dimension E | 1.500 | 1.700 | mm | |||
| Dimension L | 0.100 | 0.300 | mm | |||
| Dimension L1 | 0.200 | 0.400 | mm | |||
| Dimension | 7Ref. | |||||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP60N1K5KDTL | SOT-563 | 3000 | ||||
2504101957_Siliup-SP60N1K5KDTL_C41354827.pdf
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