NPN Silicon Transistor Siliup MMBT3904NC with 40V Collector Emitter Voltage and Compact DFN1006 3L Package
Key Attributes
Model Number:
MMBT3904NC
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
DC Current Gain:
400@10mA,1V
Transition Frequency(fT):
300MHz
Vce Saturation(VCE(sat)):
200mV@10mA,1mA
Type:
-
Pd - Power Dissipation:
100mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904NC
Package:
DFN1006-3L
Product Description
Product Overview
The MMBT3904NC is an NPN silicon general-purpose switching transistor designed for various electronic applications. It offers a collector-emitter voltage of 40V and a collector current of 0.2A, making it suitable for switching operations. This transistor is housed in a compact DFN1006-3L package.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Product Type: General Purpose Transistor
- Material: Silicon
- Polarity: NPN
- Package: DFN1006-3L
- Version: Ver-1.2
- Date: 2020/04
Technical Specifications
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector Emitter Voltage | VCEO | 40 | V |
| Collector Base Voltage | VCBO | 60 | V |
| Emitter Base Voltage | VEBO | 6 | V |
| Collector Current | IC | 200 | mA |
| Power Dissipation | Ptot | 100 | mW |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55 to +150 |
Electrical Characteristics
| Parameter | Symbol | Test Condition | Min | Max | Unit |
|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | BVCEO | IC=1mA , IB=0 | 40 | - | V |
| Collector-base breakdown voltage | BVCBO | IC=10A ,IE=0 | 60 | - | V |
| Emitter-base breakdown voltage | BVEBO | IE=10A,IC=0 | 6 | - | V |
| Collector cut-off current | ICBO | VCB=60V, IE=0 | - | 100 | nA |
| Collector cut-off current | ICEO | VCE=40V, IB=0 | - | 5 | uA |
| Emitter cut-off current | IEBO | VEB=6V, IC=0 | - | 100 | nA |
| DC current gain | hFE | VCE=1V, IC=10mA | 100 | 400 | - |
| VCE=1V, IC=0.1mA | 40 | - | - | ||
| VCE=1V, IC=1mA | 70 | - | - | ||
| VCE=1V, IC=100mA | - | 30 | - | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=10mA, IB=1mA | - | 0.2 | V |
| IC=50mA, IB=5mA | - | 0.3 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=10mA, IB=1mA | 0.65 | 0.85 | V |
| IC=50mA, IB=5mA | - | 0.95 | V | ||
| Transition frequency | fT | VCE= 20V, IC=10mA,f=100MHz | 300 | - | MHZ |
| Output Capacitance | Cobo | VCB=5.0Vdc,IE=0,f=1.0Mhz | - | 4 | pF |
| Input Capacitance | Cibo | VEB=0.5Vdc,IE=0,f=1.0Mhz | - | 8 | pF |
| Delay Time | Td | VCC=3.0VdcVBE=-0.5Vdc IC=10mAdcIB1=1.0mAdc | - | 35 | ns |
| Rise Time | Tr | VCC=3.0VdcIC=10mAdc IB1=IB2=1.0mAdc | - | 35 | - |
| Storage Time | Ts | VCC=3.0VdcIC=10mAdc IB1=IB2=1.0mAdc | - | 200 | - |
| Fall Time | Tf | VCC=3.0VdcIC=10mAdc IB1=IB2=1.0mAdc | - | 50 | - |
DFN1006-3L Package Information
| Symbol | Dimensions In Millimeters | Min. | Typ. | Max. |
|---|---|---|---|---|
| A | - | 0.47 | 0.50 | 0.55 |
| A1 | - | 0.00 | - | 0.05 |
| b | - | 0.10 | 0.15 | 0.20 |
| b2 | - | 0.45 | 0.50 | 0.55 |
| D | - | 0.95 | 1.0 | 1.05 |
| E | - | 0.55 | 0.60 | 0.65 |
| e | - | - | 0.35BSC | - |
| L1 | - | 0.20 | 0.25 | 0.30 |
| L2 | - | 0.20 | 0.25 | 0.30 |
| L3 | - | 0.40 | - | - |
| z | - | 0.02 | 0.05 | 0.08 |
Recommend Land Pattern (Unit: mm)
| Dimensions | Value (in mm) |
|---|---|
| C | 0.70 |
| G1 | 0.30 |
| G2 | 0.20 |
| X | 0.40 |
| X1 | 1.10 |
| Y | 0.25 |
| Y1 | 0.70 |
2411212332_Siliup-MMBT3904NC_C41355105.pdf
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