86--136 6733 2386
quality PNP silicon transistor Siliup MMBT3906T3 ideal for switching applications in compact SOT 323 package factory
quality PNP silicon transistor Siliup MMBT3906T3 ideal for switching applications in compact SOT 323 package factory

PNP silicon transistor Siliup MMBT3906T3 ideal for switching applications in compact SOT 323 package

Key Attributes
Model Number: MMBT3906T3
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
DC Current Gain:
300@10mA,1V
Transition Frequency(fT):
250MHz
Vce Saturation(VCE(sat)):
400mV@50mA,5mA
Type:
-
Pd - Power Dissipation:
150mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3906T3
Package:
SOT-323
Product Description

Product Overview

The MMBT3906T3 is a general-purpose PNP silicon transistor designed for switching applications. It offers a collector-emitter voltage of -40V and a collector current of -0.2A, making it suitable for various electronic circuits. This transistor is supplied in a compact SOT-323 package.

Product Attributes

  • Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
  • Product Type: General Purpose Transistor
  • Material: Silicon
  • Polarity: PNP
  • Package: SOT-323
  • Marking: MMBT3906T3

Technical Specifications

Parameter Symbol Test Condition Min Max Unit
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Collector Base Voltage VCBO -40 V
Collector Emitter Voltage VCEO -40 V
Emitter Base Voltage VEBO -5 V
Collector Current IC -200 mA
Power Dissipation Ptot 150 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 +150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Collector-base breakdown voltage BVCBO IC=-1mA ,IE=0 -40 V
Collector-emitter breakdown voltage BVCEO IC=-100A , IB=0 -40 V
Emitter-base breakdown voltage BVEBO IE=-100A,IC=0 -5 V
Base cut-off current IBL VCB=-30V, VEB(Off)=-3V -50 nA
Collector cut-off current ICEX VCB=-30V, VEB(Off)=-3V -50 nA
DC current gain hFE1 VCE=-1V, IC=-0.1mA 60
DC current gain hFE2 VCE=-1V, IC=-1mA 80
DC current gain hFE3 VCE=-1V, IC=-10mA 100 300
DC current gain hFE4 VCE=-1V, IC=-100mA 30
Collector-emitter saturation voltage VCE(sat) IC=-10mA, IB=-1mA -0.25 V
Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.4 V
Base-emitter saturation voltage VBE(sat) IC=-10mA, IB=-1mA -0.85 V
Base-emitter saturation voltage VBE(sat) IC=-50mA, IB=-5mA -0.95 V
Transition frequency fT VCE= -20V, IC=-10mA,f=30MHz 250 MHZ
Package Information (SOT-323)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min.
A 0.900 - 1.100 0.035 - 0.043 0.035 0.043
A1 0.000 - 0.100 0.000 - 0.004 0.000 0.004
A2 0.900 - 1.000 0.035 - 0.039 0.035 0.039
b 0.200 - 0.400 0.008 - 0.016 0.008 0.016
c 0.080 - 0.150 0.003 - 0.006 0.003 0.006
D 2.000 - 2.200 0.079 - 0.087 0.079 0.087
E 1.150 - 1.350 0.045 - 0.053 0.045 0.053
E1 2.150 - 2.450 0.085 - 0.096 0.085 0.096
e 0.650 TYP. 0.026 TYP.
e1 1.200 - 1.400 0.047 - 0.055 0.047 0.055
L 0.525 REF. 0.021 REF.
L1 0.260 - 0.460 0.010 - 0.018 0.010 0.018
0 - 8 0 - 8 0 8

2411212332_Siliup-MMBT3906T3_C41355098.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion factory
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
quality Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating factory
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
quality Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions factory
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
quality Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device factory
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.