Compact Surface Mount 30V N Channel MOSFET Siliup SP30N04NK with ROHS Compliance and Low On Resistance

Key Attributes
Model Number: SP30N04NK
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.8mΩ@10V;6.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
180pF
Number:
1 N-channel
Output Capacitance(Coss):
225pF
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
1.788nF
Gate Charge(Qg):
32.8nC@10V
Mfr. Part #:
SP30N04NK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP30N04NK is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mounting, this ROHS Compliant & Halogen-Free component offers fast switching speeds and is 100% tested for single pulse avalanche energy. It is ideal for applications such as DC-DC converters and motor control.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP30N04NK
  • Channel Type: N-Channel
  • Voltage Rating: 30V
  • Package: PDFN5X6-8L
  • Compliance: ROHS Compliant & Halogen-Free
  • Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 30 V
On-Resistance RDS(on)TYP @10V 3.8 m
On-Resistance RDS(on)TYP @4.5V 6.5 m
Continuous Drain Current ID 70 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS -20 20 V
Continuous Drain Current ID (Ta=25) 70 A
Continuous Drain Current ID (Tc=100C) 49 A
Pulse Drain Current IDM Tested 280 A
Single pulsed avalanche energy EAS 110 mJ
Power Dissipation PD (Tc=25C) 35 W
Thermal Resistance Junction-to-Case RJC 3.6 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =20A - 3.8 4.8 m
Static Drain-Source On-Resistance RDS(ON) VGS =4.5V, ID =20A - 6.5 9 m
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 1788 - pF
Output Capacitance Coss - 225 - pF
Reverse Transfer Capacitance Crss - 180 - pF
Total Gate Charge Qg VDS=15V , VGS=10V , ID=30A - 32.8 - nC
Gate-Source Charge Qgs - 6.3 -
Gate-Drain Charge Qgd - 7.8 -
Turn-On Delay Time Td(on) VDD=15 VGS=10V , RG=3, ID=30A - 7 - nS
Rise Time Tr - 13.5 -
Turn-Off Delay Time Td(off) - 33 - nS
Fall Time Tf - 11 -
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Diode Continuous Current IS - - 70 A
Reverse recover time Trr IS=20A, di/dt=100A/us, Tj=25 - 26 - nS
Reverse recovery charge Qrr - 11 - nC
Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

2504101957_Siliup-SP30N04NK_C41354865.pdf

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