P Channel MOSFET Siliup SP2004KND 20V Device Featuring 2KV ESD Protection Suitable for DC DC Converter Applications
Key Attributes
Model Number:
SP2004KND
Product Custom Attributes
Pd - Power Dissipation:
420mW
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
400mΩ@4.5V;550mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 P-Channel
Output Capacitance(Coss):
15pF
Input Capacitance(Ciss):
113pF
Gate Charge(Qg):
1.9nC@4.5V
Mfr. Part #:
SP2004KND
Package:
PDFN1212-3L
Product Description
Product Overview
The SP2004KND is a 20V P-Channel MOSFET designed for high power and current handling capabilities. It features a surface mount package and ESD protection of 2KV. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP2004KND
- Device Code: 04K
- Package: DFN1212-3L
- Technology: P-Channel MOSFET
- ESD Protected: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| RDS(on) | @-4.5V | 400 | m | |||
| RDS(on) | @-2.5V | 550 | m | |||
| ID | -0.75 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -0.75 | A | |||
| Pulse Drain Current | IDM | Tested | -3 | A | ||
| Power Dissipation | PD | 420 | mW | |||
| Junction-to-Ambient Thermal Resistance | RJA | 297 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.35 | -0.65 | -1.00 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-500mA | - | 400 | 550 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-200mA | - | 550 | 700 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-16V , VGS=0V , f=1MHz | - | 113 | - | pF |
| Output Capacitance | Coss | - | 15 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 9 | - | pF | |
| Total Gate Charge | Qg | VDS=-10V , VGS=-4.5V , ID=-300mA | - | 1.9 | - | nC |
| Gate-Source Charge | Qgs | - | 0.4 | - | ||
| Gate-Drain Charge | Qg | - | 0.31 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-10V VGS=-4.5V , RG=10 , ID=-200mA | - | 9 | - | nS |
| Turn-On Rise Time | tr | - | 5.7 | - | ||
| Turn-Off Delay Time | td(off) | - | 32.6 | - | ||
| Turn-Off Fall Time | tf | - | 20.3 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Package Information | ||||||
| Package Type | DFN1212-3L | |||||
| Order Information | SP2004KND | 5000/Tape | ||||
| DFN1212-3L Package Dimensions | ||||||
| Dimension | Symbol | Min(mm) | TYP(mm) | Max(mm) | ||
| A | 0.45 | 0.50 | 0.55 | |||
| A1 | 0.00 | 0.03 | 0.05 | |||
| C | 0.152 | |||||
| b1 | 0.27 | 0.32 | 0.37 | |||
| L | 0.25 | 0.30 | 0.35 | |||
| D | 1.15 | 1.20 | 1.25 | |||
| e | 0.80 | |||||
| E | 1.15 | 1.20 | 1.25 | |||
| b2 | 0.17 | 0.22 | 0.27 | |||
2504101957_Siliup-SP2004KND_C41354942.pdf
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