N Channel Power MOSFET Siliup SP010N04BGTH 100V Featuring Split Gate Trench Technology for Portable Equipment
Key Attributes
Model Number:
SP010N04BGTH
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5mΩ@10V;6.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
24pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.97nF
Output Capacitance(Coss):
1.125nF
Pd - Power Dissipation:
160W
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
SP010N04BGTH
Package:
TO-252
Product Description
Product Overview
The SP010N04BGTH is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. This advanced MOSFET utilizes Split Gate Trench Technology, offering fast switching speeds, low gate charge, and low RDS(on). It is designed for high-efficiency applications such as DC-DC converters, motor control, and portable equipment. The device is 100% single pulse avalanche energy tested, ensuring reliability in demanding environments.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N04BGTH
- Technology: Advanced Split Gate Trench Technology
- Package: TO-252
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | - | - | - | - | 100 | V |
| RDS(on)TYP | - | @10V | - | 5 | - | m |
| RDS(on)TYP | - | @4.5V | - | 6.5 | - | m |
| ID | - | - | - | - | 120 | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | - | - | - | 100 | V |
| Gate-Source Voltage | VGSS | - | - | 20 | - | V |
| Continuous Drain Current (Tc=25C) | ID | - | - | - | 120 | A |
| Continuous Drain Current (Tc=100C) | ID | - | - | - | 80 | A |
| Pulse Drain Current | IDM | Tested | - | - | 480 | A |
| Single pulsed avalanche energy | EAS | - | - | 306 | - | mJ |
| Power Dissipation (Tc=25C) | PD | - | - | - | 160 | W |
| Thermal Resistance Junction-to-Case | RJC | - | - | 0.78 | - | C/W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | C |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | C |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.7 | 3 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=30A | - | 5 | 6.3 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=20A | - | 6.5 | 8.7 | m |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 2970 | - | pF |
| Output Capacitance | Coss | - | - | 1125 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 24 | - | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=50A | - | 42 | - | nC |
| Gate-Source Charge | Qgs | - | - | 27 | - | - |
| Gate-Drain Charge | Qgd | - | - | 7.3 | - | - |
| Turn-On Delay Time | Td(on) | VDD=50V , VGS=10V , RG=3 , ID=50A | - | 12.1 | - | nS |
| Rise Time | Tr | - | - | 17.4 | - | - |
| Turn-Off Delay Time | Td(off) | - | - | 47 | - | - |
| Fall Time | Tf | - | - | 32 | - | - |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | - | 120 | A |
| Reverse recover time | Trr | IS=50A, di/dt=100A/us, Tj=25 | - | 32 | - | nS |
| Reverse recovery charge | Qrr | - | - | 146 | - | nC |
| Package Information (TO-252) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 2.200 - 2.400 | 0.087 - 0.094 | - | - | - | - |
| A1 | 0.000 - 0.127 | 0.000 - 0.005 | - | - | - | - |
| b | 0.660 - 0.860 | 0.026 - 0.034 | - | - | - | - |
| c | 0.460 - 0.580 | 0.018 - 0.023 | - | - | - | - |
| D | 6.500 - 6.700 | 0.256 - 0.264 | - | - | - | - |
| D1 | 5.100 - 5.460 | 0.201 - 0.215 | - | - | - | - |
| D2 | 4.830 REF. | 0.190 REF. | - | - | - | - |
| E | 6.000 - 6.200 | 0.236 - 0.244 | - | - | - | - |
| e | 2.186 - 2.386 | 0.086 - 0.094 | - | - | - | - |
| L | 9.800 - 10.400 | 0.386 - 0.409 | - | - | - | - |
| L1 | 2.900 REF. | 0.114 REF. | - | - | - | - |
| L2 | 1.400 - 1.700 | 0.055 - 0.067 | - | - | - | - |
| L3 | 1.600 REF. | 0.063 REF. | - | - | - | - |
| L4 | 0.600 - 1.000 | 0.024 - 0.039 | - | - | - | - |
| 1.100 - 1.300 | 0.043 - 0.051 | - | - | - | - | |
| 0 - 8 | 0 - 8 | - | - | - | - | |
| h | 0.000 - 0.300 | 0.000 - 0.012 | - | - | - | - |
| V | 5.350 REF. | 0.211 REF. | - | - | - | - |
2504101957_Siliup-SP010N04BGTH_C22385380.pdf
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