High Current 415A 30V N Channel MOSFET Siliup SP30N01AGHNP Ideal for Power Management and PWM Circuits
Key Attributes
Model Number:
SP30N01AGHNP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
415A
RDS(on):
0.75mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
1 N-channel
Pd - Power Dissipation:
200W
Output Capacitance(Coss):
3.6nF
Input Capacitance(Ciss):
6.2nF
Gate Charge(Qg):
98nC@10V
Mfr. Part #:
SP30N01AGHNP
Package:
DFN-8L(5x6)
Product Description
Product Overview
The SP30N01AGHNP is a 30V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed with advanced split gate trench technology and a Cu-Clip process, this MOSFET offers fast switching, low gate charge, and low RDS(on). It is ideal for PWM applications, hard switched, and high-frequency circuits, as well as power management solutions. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP30N01AGHNP
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 30 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 0.75 | m | ||
| ID | ID | 415 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 415 | A | |||
| Continuous Drain Current (Tc=100) | ID | 263 | A | |||
| Pulsed Drain Current | IDM | 1660 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 1800 | mJ | |||
| Power Dissipation (Tc=25) | PD | 200 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.63 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=50A | - | 0.75 | 0.93 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 6200 | - | pF |
| Output Capacitance | Coss | - | 3600 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 160 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=20A | - | 98 | - | nC |
| Gate-Source Charge | Qgs | - | 18 | - | nC | |
| Gate-Drain Charge | Qgd | - | 15 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=15V , VGS=10V , RG=1.6 , ID=20A | - | 16 | - | nS |
| Rise Time | Tr | - | 38 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 88 | - | nS | |
| Fall Time | Tf | - | 23 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 415 | A | |
| Reverse Recovery Time | Trr | IS=100A, di/dt=200A/us, TJ=25 | - | 55 | - | nS |
| Reverse Recovery Charge | Qrr | - | 125 | - | nC | |
| Package Information: PDFN5X6-8L | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 - 1.000 | 0.035 - 0.039 | ||||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 - 5.096 | 0.195 - 0.201 | ||||
| E | 5.974 - 6.126 | 0.235 - 0.241 | ||||
| D1 | 3.910 - 4.110 | 0.154 - 0.162 | ||||
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | ||||
| D2 | 4.824 - 4.976 | 0.190 - 0.196 | ||||
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | ||||
| k | 1.190 - 1.390 | 0.047 - 0.055 | ||||
| b | 0.350 - 0.450 | 0.014 - 0.018 | ||||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 - 0.711 | 0.022 - 0.028 | ||||
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | ||||
| H | 0.574 - 0.726 | 0.023 - 0.029 | ||||
| 10 - 12 | 10 - 12 | |||||
Note: 1 The test condition is VDD=15V, VGS=10V, L=0.5mH, RG=25
Order Information: Device: SP30N01AGHNP, Package: PDFN5X6-8L, Unit/Tape: 5000
Marking: SP30N01AGHNP :Device Code, *:Week Code
2508111740_Siliup-SP30N01AGHNP_C50199168.pdf
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