High Frequency MOSFET Siliup SP13HF30TF 300V Super Junction with Fast Switching and Low Gate Charge

Key Attributes
Model Number: SP13HF30TF
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
300V
Current - Continuous Drain(Id):
125A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6.5pF
Number:
1 N-channel
Output Capacitance(Coss):
340pF
Input Capacitance(Ciss):
5.2nF
Pd - Power Dissipation:
500W
Gate Charge(Qg):
-
Mfr. Part #:
SP13HF30TF
Package:
TO-247
Product Description

Product Overview

The SP13HF30TF is a 300V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency applications, it features fast switching, low gate charge, and low Rdson. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard-switched and high-frequency circuits, and power management systems. It comes in a TO-247 package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP13HF30TF
  • Package Type: TO-247

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
Drain Source Voltage V(BR)DSS 300 V
RDS(on) RDS(on) @10V 13 m
Continuous Drain Current ID 125 A
Absolute Maximum Ratings
Drain source voltage VDS 300 V
Gate source voltage VGS 20 V
Continuous drain current (Tc=25) ID 125 A
Continuous drain current (Tc=100) ID 83 A
Pulsed drain current IDM 380 A
Single pulsed avalanche energy EAS 1332 mJ
Power dissipation (Tc=25) PD 500 W
Thermal resistance Junction-to-case RJC 0.25 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V,ID = 250A 300 350 - V
Drain Cut-Off Current IDSS VDS = 240V, VGS = 0V - - 1 A
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.5 3.5 4.5 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 35A - 13 16 m
Dynamic Characteristics
Input Capacitance Ciss VDS =50V, VGS = 0V, f = 1.0MHz - 5200 - pF
Output Capacitance Coss - 340 -
Reverse Transfer Capacitance Crss - 6.5 -
Switching Characteristics
Total Gate Charge Qg VDS=200V , VGS=10V , ID=40A - 85 - nC
Gate-Source Charge Qgs - 26 -
Gate-Drain Charge Qgd - 22 -
Turn-On Delay Time td(on) VGS = 10V, VDS = 200V, ID=40A , RG = 20 - 49 - nS
Rise Time tr - 32 -
Turn-Off Delay Time td(off) - 82 -
Fall Time tf - 8 -
Drain-Source Body Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 125 A
Reverse Recovery Time Trr VR=200V,IS=40A,di/dt=100A/us - 118 - nS
Reverse Recovery Charge Qrr - 0.56 - uC
TO-247 Package Information (Dimensions in Millimeters)
Symbol Min. Max. Inches Min. Inches Max.
A 4.850 5.150 0.191 0.200
A1 2.200 2.600 0.087 0.102
b 1.000 1.400 0.039 0.055
b1 2.800 3.200 0.110 0.126
b2 1.800 2.200 0.071 0.087
c 0.500 0.700 0.020 0.028
c1 1.900 2.100 0.075 0.083
D 15.450 15.750 0.608 0.620
E1 3.500 REF. 0.138 REF.
E2 3.600 REF. 0.142 REF.
L 40.900 41.300 1.610 1.626
L1 24.800 25.100 0.976 0.988
L2 20.300 20.600 0.799 0.811
7.100 7.300 0.280 0.287
e 5.450 TYP. 0.215 TYP.
H 5.980 REF. 0.235 REF.
h 0.000 0.300 0.000 0.012

2412041501_Siliup-SP13HF30TF_C42404765.pdf

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