Low RDS on 40V N Channel MOSFET Siliup SP40N01GMT Suitable for High Frequency and Hard Switching Uses

Key Attributes
Model Number: SP40N01GMT
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
290A
RDS(on):
1.8mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.5nF
Output Capacitance(Coss):
1.85nF
Pd - Power Dissipation:
438W
Gate Charge(Qg):
128nC@10V
Mfr. Part #:
SP40N01GMT
Package:
STOLL-8
Product Description

Product Overview

The SP40N01GMT is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for PWM applications, hard switched, and high-frequency circuits, as well as power management solutions. It features 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP40N01GMT

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS 40 V
RDS(on)TYP @10V 0.85 m
RDS(on)TYP @4.5V 1.2 m
ID 290 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25, unless otherwise noted) 40 V
Gate-Source Voltage VGS (Ta=25, unless otherwise noted) 20 V
Continuous Drain Current ID (Tc=25) 290 A
Continuous Drain Current ID (Tc=100) 193 A
Pulsed Drain Current IDM 1160 A
Single Pulse Avalanche Energy EAS 989 mJ
Total Power Dissipation PD (Tc=25) 438 W
Thermal Resistance Junction-to-Case RJC 0.28 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 - 47 V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1 1.7 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=50A - 0.85 1.0 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=50A - 1.2 1.8 m
Dynamic Characteristics
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 5500 - pF
Output Capacitance Coss - 1850 - pF
Reverse Transfer Capacitance Crss - 65 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=85A - 128 - nC
Gate-Source Charge Qgs - 19 - nC
Gate-Drain Charge Qgd - 12 - nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=20V , VGS=10V , RG=1.6, ID=85A - 13.5 - nS
Rise Time Tr - 8.8 -
Turn-Off Delay Time Td(off) - 52 -
Fall Time Tf - 9.6 -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 290 A
Reverse Recovery Time Trr IS=50A, di/dt=100A/us, TJ=25 - 55 - nS
Reverse Recovery Charge Qrr - 53 - nC
Package Information (sTOLL)
Symbol Dimensions (mm) MIN NOM MAX
A 2.262 2.300 2.338
A3 0.492 0.500 0.508
D 7.950 8.000 8.050
D5 6.650 6.700 6.750
E 6.950 7.000 7.050
e 1.30 BCS
e1 1.60 BCS
D1 0.130 ref
D2 5.150 5.200 5.250
D3 2.520 2.570 2.620
D4 2.450 2.500 2.550
b 0.750 0.800 0.850
b1 0.350 ref
b2 0.350 0.450 0.550
b3 0.400 0.425 0.450
b4 1.100 1.200 1.300
b5 1.550 1.650 1.750
L 1.100 1.150 1.200
L1 0.650 0.700 0.750
L2 0.550 0.600 0.650
L3 0.850 0.900 0.950
L4 0.185 0.235 0.285
E1 6.850 6.900 6.950
E2 5.910 5.960 6.010
E3 5.610 5.660 5.710
E4 6.510 6.560 6.610
K1 2.430 ref
K2 1.970 ref
K3 2.275 2.300 2.325

2505291610_Siliup-SP40N01GMT_C48888449.pdf

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