N Channel 100V Power MOSFET Siliup SP010N01GHTO Featuring Split Gate Trench Technology for Switching
Key Attributes
Model Number:
SP010N01GHTO
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
390A
RDS(on):
1.3mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Number:
1 N-channel
Output Capacitance(Coss):
1.936nF
Pd - Power Dissipation:
435W
Input Capacitance(Ciss):
15.756nF
Mfr. Part #:
SP010N01GHTO
Package:
TOLL
Product Description
Product Overview
The SP010N01GHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is suitable for PWM applications, hard switched and high-frequency circuits, and power management. It has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N01GHTO
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 100 | V | |||
| RDS(on)TYP | RDS(on)TYP | @10V | 1.05 | m | ||
| ID | ID | 390 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25 unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 390 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 260 | A | ||
| Pulsed Drain Current | IDM | 1560 | A | |||
| Single Pulse Avalanche Energy | EAS | 2401 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 435 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.29 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | 110 | - | V |
| Drain Cut-Off Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=50A | - | 1.05 | 1.3 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 15756 | - | pF |
| Output Capacitance | Coss | - | 1936 | - | ||
| Reverse Transfer Capacitance | Crss | - | 75 | - | ||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=100A | - | 268 | - | nC |
| Gate-Source Charge | Qgs | - | 78 | - | ||
| Gate-Drain Charge | Qg | - | 79 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V , RG=6, ID=100A | - | 83 | - | nS |
| Rise Time | tr | - | 183 | - | ||
| Turn-Off Delay Time | td(off) | - | 176 | - | ||
| Fall Time | tf | - | 67 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 390 | A | |
| Reverse Recovery Time | Trr | IS=100A, di/dt=100A/us, TJ=25 | - | 90 | - | nS |
| Reverse Recovery Charge | Qrr | - | 209 | - | nC | |
| Package Information | ||||||
| Package Type | TOLL | |||||
| Order Information | SP010N01GHTO | TOLL | 2000 | Unit/Tape | ||
2504101957_Siliup-SP010N01GHTO_C45351232.pdf
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