40V N Channel Power MOSFET Siliup SP40N01ABGTO with Split Gate Trench Technology and Fast Switching
Key Attributes
Model Number:
SP40N01ABGTO
Product Custom Attributes
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
330A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
145pF
Number:
1 N-channel
Output Capacitance(Coss):
3.55nF
Pd - Power Dissipation:
270W
Input Capacitance(Ciss):
7.3nF
Gate Charge(Qg):
98nC
Mfr. Part #:
SP40N01ABGTO
Package:
TOLL
Product Description
Product Overview
The SP40N01ABGTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for PWM applications, hard-switched, and high-frequency circuits, as well as power management systems. It features 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP40N01ABGTO
- Package: TOLL
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 40 | V | ||||
| RDS(on)TYP | @10V | 0.7 | m | |||
| RDS(on)TYP | @4.5V | 1 | m | |||
| ID | 330 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 40 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 330 | A | |||
| Continuous Drain Current (Tc=100) | ID | 220 | A | |||
| Pulsed Drain Current | IDM | 1320 | A | |||
| Single Pulse Avalanche Energy | EAS | 1369 | mJ | |||
| Power Dissipation (Tc=25) | PD | 270 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.46 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | 45 | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 | 1.7 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 0.7 | 1 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=20A | - | 1 | 1.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 7300 | - | pF |
| Output Capacitance | Coss | - | 3550 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 145 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=50A | - | 98 | - | nC |
| Gate-Source Charge | Qgs | - | 19 | - | ||
| Gate-Drain Charge | Qg d | - | 17 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V , VGS=10V , RG=1.6 ID=50A | - | 13.5 | - | nS |
| Rise Time | Tr | - | 35.8 | - | ||
| Turn-Off Delay Time | Td(off) | - | 66 | - | ||
| Fall Time | Tf | - | 24.8 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 330 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=200A/us, TJ=25 | - | 68 | - | nS |
| Reverse Recovery Charge | Qrr | - | 95 | - | nC | |
| Package Information (TOLL) | ||||||
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Nom. | Dimensions (mm) Max. | |||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 REF | |||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 BSC | |||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 BSC | |||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 REF. | |||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
2412041501_Siliup-SP40N01ABGTO_C42404757.pdf
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