Power MOSFET SP85N01GHTO 85V N Channel Featuring Low RDSon and Fast Switching for Power Management
Key Attributes
Model Number:
SP85N01GHTO
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
390A
RDS(on):
1mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 N-channel
Output Capacitance(Coss):
2.6nF
Input Capacitance(Ciss):
15nF
Pd - Power Dissipation:
500W
Gate Charge(Qg):
263nC@10V
Mfr. Part #:
SP85N01GHTO
Package:
TOLL-8L
Product Description
Product Overview
The SP85N01GHTO is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP85N01GHTO
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 85 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (Tc=25) | ID | 390 | A | |
| Continuous Drain Current (Tc=100) | ID | 230 | A | |
| Pulsed Drain Current | IDM | 1560 | A | |
| Single Pulse Avalanche Energy | EAS | 2652 | mJ | |
| Power Dissipation (Tc=25) | PD | 500 | W | |
| Thermal Resistance Junction-to-Case | RJC | 0.25 | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Drain-Source Breakdown Voltage | BVDSS | 85 | V | ID = 250A, VGS = 0V |
| Drain Cut-Off Current | IDSS | 1 | A | VDS = 68V, VGS = 0V |
| Gate Leakage Current | IGSS | 0.1 | A | VGS = 20V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 2.0 | V | VDS = VGS, ID = 250A |
| Drain-Source ON Resistance | RDS(ON) | 1 | m | VGS = 10V, ID = 20A |
| Input Capacitance | Ciss | 15000 | pF | VDS =40V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 2600 | pF | |
| Reverse Transfer Capacitance | Crss | 60 | pF | |
| Total Gate Charge | Qg | 263 | nC | VDS=40V , VGS=10V , ID=20A |
| Gate-Source Charge | Qgs | 68 | nC | |
| Gate-Drain Charge | Qgd | 53 | nC | |
| Turn-On Delay Time | td(on) | 35 | nS | VGS = 10V, VDS = 40V, ID=20A , RG = 1.6 |
| Rise Time | tr | 20 | nS | |
| Turn-Off Delay Time | td(off) | 58 | nS | |
| Fall Time | tf | 21 | nS | |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | IS = 1A, VGS = 0V |
| Maximum Body-Diode Continuous Current | IS | 390 | A | |
| Reverse Recovery Time | Trr | 150 | nS | IS=100A, di/dt=100A/us, TJ=25 |
| Reverse Recovery Charge | Qrr | 390 | nC |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP85N01GHTO | TOLL | 2000 |
Package Information (TOLL)
| Symbol | Dimensions (Millimeters) | ||
|---|---|---|---|
| Min. | Nom. | Max. | |
| A | 2.20 | 2.30 | 2.40 |
| b | 0.65 | 0.75 | 0.85 |
| C | 0.508 | REF | |
| D | 10.25 | 10.40 | 10.55 |
| D1 | 2.85 | 3.00 | 3.15 |
| E | 9.75 | 9.90 | 10.05 |
| E1 | 9.65 | 9.80 | 9.95 |
| E2 | 8.95 | 9.10 | 9.25 |
| E3 | 7.25 | 7.40 | 7.55 |
| e | 1.20 | BSC | |
| F | 1.05 | 1.20 | 1.35 |
| H | 11.55 | 11.70 | 11.85 |
| H1 | 6.03 | 6.18 | 6.33 |
| H2 | 6.85 | 7.00 | 7.15 |
| H3 | 3.00 | BSC | |
| L | 1.55 | 1.70 | 1.85 |
| L1 | 0.55 | 0.7 | 0.85 |
| L2 | 0.45 | 0.6 | 0.75 |
| M | 0.08 | REF. | |
| 8 | 10 | 12 | |
| K | 4.25 | 4.40 | 4.55 |
2504101957_Siliup-SP85N01GHTO_C22466786.pdf
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