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quality 700V N Channel Planar MOSFET Siliup SP7N70TG with Fast Switching and Low Gate Charge Characteristics factory
quality 700V N Channel Planar MOSFET Siliup SP7N70TG with Fast Switching and Low Gate Charge Characteristics factory

700V N Channel Planar MOSFET Siliup SP7N70TG with Fast Switching and Low Gate Charge Characteristics

Key Attributes
Model Number: SP7N70TG
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.29Ω@10V
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
5.4pF
Number:
1 N-channel
Output Capacitance(Coss):
89pF
Input Capacitance(Ciss):
1.064nF
Pd - Power Dissipation:
38W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
SP7N70TG
Package:
TO-220F
Product Description

Product Overview

The SP7N70TG is a 700V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, this MOSFET offers fast switching speeds, low gate charge, and low RDS(on). It is ideal for DC-DC converters and synchronous rectification, featuring 100% single pulse avalanche energy testing for enhanced reliability.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP7N70TG
  • Package Type: TO-220F

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Voltage VDS 700 V
Gate-Source Voltage VGS 30 V
Continuous Drain Current (Tc=25) ID 7 A
Continuous Drain Current (Tc=100) ID 4.7 A
Pulsed Drain Current IDM 28 A
Single Pulse Avalanche Energy EAS 412 mJ
Power Dissipation (Tc=25) PD 38 W
Thermal Resistance Junction-to-Case RJC 3.3 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 700 V
Drain Cut-Off Current IDSS VDS = 560V, VGS = 0V 1 A
Gate Leakage Current IGSS VGS = 30V, VDS = 0V 100 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 3.0 4.0 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 10A 1290 1620 m
Input Capacitance Ciss VGS=0V, VDS= 25V,F=1MHz 1064 pF
Output Capacitance Coss 89 pF
Reverse Transfer Capacitance Crss 5.4 pF
Total Gate Charge Qg VDS= 350V, ID=4A, VGS= 10V 21 nC
Gate-Source Charge Qgs 5.7 nC
Gate-Drain Charge Qgd 8.3 nC
Turn-On Delay Time td(on) VDD= 350V, ID= 4A, VGS= 10V, RG=10 14 nS
Rise Time tr 29 nS
Turn-Off Delay Time td(off) 49 nS
Fall Time tf 31 nS
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V 1.2 V
Maximum Body-Diode Continuous Current IS 7 A
Body Diode Reverse Recovery Time Trr IS=7A, di/dt=100A/us, TJ=25 412 nS
Body Diode Reverse Recovery Charge Qrr 3.1 uC

Package Information (TO-220F):

Symbol Dimensions (mm)
A 4.300 - 4.700
A1 1.300 REF.
A2 2.800 - 3.200
A3 2.500 - 2.900
b 0.500 - 0.750
b1 1.100 - 1.350
b2 1.500 - 1.750
c 0.500 - 0.750
D 9.960 - 10.360
E 14.800 - 15.200
e 2.540 TYP.
F 2.700 REF.
3.500 REF.
h 0.000 - 0.300
h1 0.800 REF.
h2 0.500 REF.
L 28.000 - 28.400
L1 1.700 - 1.900
L2 0.900 - 1.100

2506271720_Siliup-SP7N70TG_C49257234.pdf

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