86--136 6733 2386
quality Power Switching MOSFET Siliup SP010N02AGHTF Featuring Low RDSon and TO247 Package for DC-DC Converters factory
quality Power Switching MOSFET Siliup SP010N02AGHTF Featuring Low RDSon and TO247 Package for DC-DC Converters factory
quality Power Switching MOSFET Siliup SP010N02AGHTF Featuring Low RDSon and TO247 Package for DC-DC Converters factory
quality Power Switching MOSFET Siliup SP010N02AGHTF Featuring Low RDSon and TO247 Package for DC-DC Converters factory

Power Switching MOSFET Siliup SP010N02AGHTF Featuring Low RDSon and TO247 Package for DC-DC Converters

Key Attributes
Model Number: SP010N02AGHTF
Product Custom Attributes
Mfr. Part #:
SP010N02AGHTF
Package:
TO-247
Product Description

Product Overview

The SP010N02AGHTF is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is designed for power switching applications, DC-DC converters, and power management systems. It comes in a TO-247 package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP010N02AGHTF
  • Technology: Advanced Split Gate Trench Technology
  • Channel Type: N-Channel
  • Package: TO-247

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Units
Product Summary
Drain-Source Voltage V(BR)DSS 100 V
RDS(on) RDS(on) @10V 1.7 m
Continuous Drain Current ID 275 A
Absolute Maximum Ratings
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID Silicon Limit 300 A
Continuous Drain Current (Tc=25) ID Package Limit 275 A
Continuous Drain Current (Tc=100) ID 183 A
Pulsed Drain Current IDM 1100 A
Single Pulse Avalanche Energy EAS 2025 mJ
Power Dissipation (Tc=25) PD 300 W
Power Dissipation (Tc=100) PD 120 W
Thermal Resistance Junction-to-Case RJC 0.42 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 100 - - V
Drain Cut-Off Current IDSS VDS=80V , VGS=0V , TJ=25 - - 1 A
Gate Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 2 3 4 V
Drain-Source ON Resistance RDS(ON) VGS=10V , ID=20A - 1.7 2.15 m
Gate Resistance RG VDS=50V , VGS=0V , f=1MHz - 2.5 -
Dynamic Characteristics
Input Capacitance Ciss VDS=50V , VGS=0V , f=1MHz - 9499 - pF
Output Capacitance Coss - 1465 - pF
Reverse Transfer Capacitance Crss - 52 - pF
Total Gate Charge Qg VDS=50V , VGS=10V , ID=100A - 139 - nC
Gate-Source Charge Qgs - 35.7 -
Gate-Drain Charge Qg - 25 -
Gate Pleteau Voltage Vpleteau - 5 - V
Switching Characteristics
Turn-On Delay Time td(on) VDD=50V , VGS=10V , RG=4, ID=100A - 20 - nS
Rise Time tr - 59.5 -
Turn-Off Delay Time td(off) - 70 -
Fall Time tf - 23 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 275 A
Reverse Recovery Time Trr IS=50A, di/dt=100A/us, TJ=25 - 96 - nS
Reverse Recovery Charge Qrr - 196 - nC

Order Information

Device Package Unit/Tube
SP010N02AGHTF TO-247 30

TO-247 Package Information

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.850 5.150 0.191 0.200
A1 2.200 2.600 0.087 0.102
b 1.000 1.400 0.039 0.055
b1 2.800 3.200 0.110 0.126
b2 1.800 2.200 0.071 0.087
c 0.500 0.700 0.020 0.028
c1 1.900 2.100 0.075 0.083
D 15.450 15.750 0.608 0.620
E1 3.500 REF. 0.138 REF.
E2 3.600 REF. 0.142 REF.
L 40.900 41.300 1.610 1.626
L1 24.800 25.100 0.976 0.988
L2 20.300 20.600 0.799 0.811
7.100 7.300 0.280 0.287
e 5.450 TYP. 0.215 TYP.
H 5.980 REF. 0.235 REF.
h 0.000 0.300 0.000 0.012

2511281600_Siliup-SP010N02AGHTF_C53059011.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance factory
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
quality High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics factory
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
quality Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature factory
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
quality YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages factory
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.