Surface Mount 40V Complementary MOSFET Siliup SP4012CNK with Fast Switching Speeds and ROHS Compliance
Product Overview
The SP4012CNK is a 40V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mounting, this device offers fast switching speeds and is ROHS Compliant & Halogen-Free. It features 100% single pulse avalanche energy testing. Typical applications include DC-DC converters and motor control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP4012CNK
- Certifications: ROHS Compliant & Halogen-Free
- Package: PDFN5X6-8L
- Origin: China (implied by company name and website)
Technical Specifications
| SP4012CNK 40V Complementary MOSFET | |||
|---|---|---|---|
| Parameter | N-Channel | P-Channel | Unit |
| Product Summary | V(BR)DSS: 40V RDS(on)TYP: 15m@10V ID: 25A | V(BR)DSS: -40V RDS(on)TYP: 18m@4.5V ID: -23A | |
| Absolute Maximum Ratings (Ta=25) | |||
| Drain-Source Voltage | VDS: 40 | VDS: -40 | V |
| Gate-Source Voltage | VGS: 20 | VGS: 20 | V |
| Continuous Drain Current (Tc=25C) | ID: 25 | ID: -23 | A |
| Pulse Drain Current Tested | IDM: 100 | IDM: -92 | A |
| Single pulsed avalanche energy (EAS) | 29 | 48 | mJ |
| Power Dissipation (Tc=25C) | PD: 35 | W | |
| Thermal Resistance Junction-to-Case | RJC: 3.6 | C/W | |
| Storage Temperature Range | TSTG: -55 to 150 | C | |
| Operating Junction Temperature Range | TJ: -55 to 150 | C | |
| Electrical Characteristics (Ta=25) | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA: 40 | VGS=0V, ID=-250uA: -40 | V |
| Drain-Source Leakage Current (IDSS) | VDS=32V, VGS=0V: - | VDS=-32V, VGS=0V: - | 1 uA / -1 uA |
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V: 100 | nA | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID=250uA: 1.0 to 2.5 | VGS=VDS, ID=-250uA: -1.0 to -2.5 | V |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V, ID=10A: 15 to 19 | VGS=-10V, ID=-5A: 23 to 29 | m |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V, ID=8A: 18 to 25 | VGS=-4.5V, ID=-3A: 32 to 43 | m |
| Dynamic Characteristics | |||
| Input Capacitance (Ciss) | VDS=15V, VGS=0V, f=1MHz: 1061 | VDS=-15V, VGS=0V, f=1MHz: 1415 | pF |
| Output Capacitance (Coss) | - 110 | - 134 | pF |
| Reverse Transfer Capacitance (Crss) | - 95 | - 102 | pF |
| Total Gate Charge (Qg) | VDS=15V, VGS=10V, ID=10A: 23 | VDS=-15V, VGS=-10V, ID=-10A: 23.5 | nC |
| Gate-Source Charge (Qgs) | - 6.3 | - 3.5 | nC |
| Gate-Drain Charge (Qgd) | - 5.3 | - 3.3 | nC |
| Switching Characteristics | |||
| Turn-On Delay Time (Td(on)) | VDD=15V, VGS=10V, RG=1.5, ID=8A: 5.5 | VDD=-15V, VGS=-10V, RG=3, ID=-6A: 11 | nS |
| Rise Time (Tr) | - 14 | - 15.7 | nS |
| Turn-Off Delay Time (Td(off)) | - 25 | - 35 | nS |
| Fall Time (Tf) | - 4.6 | - 5.5 | nS |
| Diode Characteristics | |||
| Diode Forward Voltage (VSD) | VGS=0V, IS=1A, TJ=25: - 1.2 | VGS=0V, IS=-1A, TJ=25: - -1.2 | V |
| Maximum Body-Diode Continuous Current (IS) | - - 25 | - -23 | A |
| Reverse recover time (Trr) | IS=20A, di/dt=100A/us, Tj=25: - 12.5 | IS=-15A, di/dt=-100A/us, Tj=25: - 28 | nS |
| Reverse recovery charge (Qrr) | - 9 | - 36 | nC |
| Package Information (PDFN5X6-8L) | Dimensions in Millimeters: A(0.900-1.000), A3(0.254 REF.), D(4.944-5.096), E(5.974-6.126), D1(1.470-1.870), D2(0.470-0.870), E1(3.375-3.575), D3(4.824-4.976), E2(5.674-5.826), k(1.190-1.390), b(0.350-0.450), e(1.270 TYP.), L(0.559-0.711), L1(0.424-0.576), H(0.574-0.726), (10-12) | ||
| Order Information | Device: SP4012CNK, Package: PDFN5X6-8L, Unit/Tape: 5000 | ||
| Marking | 4012C :Device Code * :Month Code | ||
2504101957_Siliup-SP4012CNK_C22385423.pdf
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