Surface Mount 40V Complementary MOSFET Siliup SP4012CNK with Fast Switching Speeds and ROHS Compliance

Key Attributes
Model Number: SP4012CNK
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
19mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
95pF;102pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
1.061nF;1.415nF
Output Capacitance(Coss):
110pF;134pF
Pd - Power Dissipation:
32W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
SP4012CNK
Package:
PDFNWB-8L(5x6)
Product Description

Product Overview

The SP4012CNK is a 40V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mounting, this device offers fast switching speeds and is ROHS Compliant & Halogen-Free. It features 100% single pulse avalanche energy testing. Typical applications include DC-DC converters and motor control.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP4012CNK
  • Certifications: ROHS Compliant & Halogen-Free
  • Package: PDFN5X6-8L
  • Origin: China (implied by company name and website)

Technical Specifications

SP4012CNK 40V Complementary MOSFET
Parameter N-Channel P-Channel Unit
Product Summary V(BR)DSS: 40V
RDS(on)TYP: 15m@10V
ID: 25A
V(BR)DSS: -40V
RDS(on)TYP: 18m@4.5V
ID: -23A
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDS: 40 VDS: -40 V
Gate-Source Voltage VGS: 20 VGS: 20 V
Continuous Drain Current (Tc=25C) ID: 25 ID: -23 A
Pulse Drain Current Tested IDM: 100 IDM: -92 A
Single pulsed avalanche energy (EAS) 29 48 mJ
Power Dissipation (Tc=25C) PD: 35 W
Thermal Resistance Junction-to-Case RJC: 3.6 C/W
Storage Temperature Range TSTG: -55 to 150 C
Operating Junction Temperature Range TJ: -55 to 150 C
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage (BVDSS) VGS=0V, ID=250uA: 40 VGS=0V, ID=-250uA: -40 V
Drain-Source Leakage Current (IDSS) VDS=32V, VGS=0V: - VDS=-32V, VGS=0V: - 1 uA / -1 uA
Gate-Source Leakage Current (IGSS) VGS=20V, VDS=0V: 100 nA
Gate Threshold Voltage (VGS(th)) VGS=VDS, ID=250uA: 1.0 to 2.5 VGS=VDS, ID=-250uA: -1.0 to -2.5 V
Static Drain-Source On-Resistance (RDS(ON)) VGS=10V, ID=10A: 15 to 19 VGS=-10V, ID=-5A: 23 to 29 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=4.5V, ID=8A: 18 to 25 VGS=-4.5V, ID=-3A: 32 to 43 m
Dynamic Characteristics
Input Capacitance (Ciss) VDS=15V, VGS=0V, f=1MHz: 1061 VDS=-15V, VGS=0V, f=1MHz: 1415 pF
Output Capacitance (Coss) - 110 - 134 pF
Reverse Transfer Capacitance (Crss) - 95 - 102 pF
Total Gate Charge (Qg) VDS=15V, VGS=10V, ID=10A: 23 VDS=-15V, VGS=-10V, ID=-10A: 23.5 nC
Gate-Source Charge (Qgs) - 6.3 - 3.5 nC
Gate-Drain Charge (Qgd) - 5.3 - 3.3 nC
Switching Characteristics
Turn-On Delay Time (Td(on)) VDD=15V, VGS=10V, RG=1.5, ID=8A: 5.5 VDD=-15V, VGS=-10V, RG=3, ID=-6A: 11 nS
Rise Time (Tr) - 14 - 15.7 nS
Turn-Off Delay Time (Td(off)) - 25 - 35 nS
Fall Time (Tf) - 4.6 - 5.5 nS
Diode Characteristics
Diode Forward Voltage (VSD) VGS=0V, IS=1A, TJ=25: - 1.2 VGS=0V, IS=-1A, TJ=25: - -1.2 V
Maximum Body-Diode Continuous Current (IS) - - 25 - -23 A
Reverse recover time (Trr) IS=20A, di/dt=100A/us, Tj=25: - 12.5 IS=-15A, di/dt=-100A/us, Tj=25: - 28 nS
Reverse recovery charge (Qrr) - 9 - 36 nC
Package Information (PDFN5X6-8L) Dimensions in Millimeters: A(0.900-1.000), A3(0.254 REF.), D(4.944-5.096), E(5.974-6.126), D1(1.470-1.870), D2(0.470-0.870), E1(3.375-3.575), D3(4.824-4.976), E2(5.674-5.826), k(1.190-1.390), b(0.350-0.450), e(1.270 TYP.), L(0.559-0.711), L1(0.424-0.576), H(0.574-0.726), (10-12)
Order Information Device: SP4012CNK, Package: PDFN5X6-8L, Unit/Tape: 5000
Marking 4012C :Device Code * :Month Code

2504101957_Siliup-SP4012CNK_C22385423.pdf

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