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quality High Voltage N-Channel MOSFET Siliup SP3N150TF with Fast Switching and Low Gate Charge Characteristics factory
quality High Voltage N-Channel MOSFET Siliup SP3N150TF with Fast Switching and Low Gate Charge Characteristics factory

High Voltage N-Channel MOSFET Siliup SP3N150TF with Fast Switching and Low Gate Charge Characteristics

Key Attributes
Model Number: SP3N150TF
Product Custom Attributes
Drain To Source Voltage:
1.5kV
Configuration:
-
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
3.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
2.6pF
Number:
-
Output Capacitance(Coss):
96pF
Input Capacitance(Ciss):
1.936nF
Pd - Power Dissipation:
180W
Gate Charge(Qg):
36.6nC@10V
Mfr. Part #:
SP3N150TF
Package:
TO-247
Product Description

Product Overview

The SP3N150TF is a 1500V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching and synchronous rectification, this MOSFET features fast switching speeds, low gate charge, and low RDS(on). It is ideal for DC-DC converter applications and is 100% tested for single pulse avalanche energy. The device comes in a TO-247 package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Line: SP3N150TF
  • Channel Type: N-Channel
  • Technology: Planar MOSFET
  • Package Type: TO-247
  • Device Code: 3N150

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
Drain-Source Voltage VDS 1500 V
Gate-Source Voltage VGS 30 V
Continuous Drain Current (Tc=25) ID 3 A
Continuous Drain Current (Tc=100) ID 2 A
Pulsed Drain Current IDM 12 A
Single Pulse Avalanche Energy EAS 180 mJ
Power Dissipation (Tc=25) PD 180 W
Thermal Resistance Junction-to-Case RJC 0.69 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 1500 - - V
Drain-Source Leakage Current IDSS VDS=1500V , VGS=0V , TJ=25 - - 25 uA
Gate-Source Leakage Current IGSS VGS=30V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 2.5 3.5 4.5 V
Drain-Source ON Resistance RDS(ON) VGS=10V , ID=1.5A - 5.4 8.2
Dynamic Characteristics
Input Capacitance Ciss VDS=25V , VGS=0V , f=1MHz - 1936 - pF
Output Capacitance Coss - 96 - pF
Reverse Transfer Capacitance Crss - 2.6 - pF
Total Gate Charge Qg VDS=750V , VGS=10V , ID=3A - 36.6 - nC
Gate-Source Charge Qgs - 9.6 - nC
Gate-Drain Charge Qgd - 14.6 - nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=750V , VGS=10V , RG=10, ID=3A - 35.6 - nS
Rise Time Tr - 17.4 - nS
Turn-Off Delay Time Td(off) - 56 - nS
Fall Time Tf - 33.2 - nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS=1A,VGS=0V - - 1.2 V
Maximum Body-Diode Continuous Current IS 3
Body Diode Reverse Recovery Time Trr IS=3A , dIF/dt=100A/us - 805 - nS
Body Diode Reverse Recovery Charge Qrr - 6.7 - nC

TO-247 Package Dimensions (Millimeters):

Symbol Min. Max.
A 4.850 5.150
A1 2.200 2.600
b 1.000 1.400
b1 2.800 3.200
b2 1.800 2.200
c 0.500 0.700
c1 1.900 2.100
D 15.450 15.750
E1 3.500 (REF.)
E2 3.600 (REF.)
L 40.900 41.300
L1 24.800 25.100
L2 20.300 20.600
7.100 7.300
e 5.450 (TYP.)
H 5.980 (REF.)
h 0.000 0.300

2504101957_Siliup-SP3N150TF_C42372398.pdf

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