Silicon Carbide MOSFET Siliup SP35N120CTF 1200V High Voltage Device for Photovoltaic Inverters and Motor Drives
Key Attributes
Model Number:
SP35N120CTF
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
65A
Operating Temperature -:
-55℃~+175℃
RDS(on):
60mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
8pF
Output Capacitance(Coss):
121pF
Input Capacitance(Ciss):
2.56nF
Pd - Power Dissipation:
327W
Gate Charge(Qg):
124nC
Mfr. Part #:
SP35N120CTF
Package:
TO-247-3L
Product Description
Product Overview
The SP35N120CTF is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for high-speed switching applications, it offers low capacitances, high blocking voltage with low RDS(on), and is designed for ease of paralleling and driving. This RoHS-compliant MOSFET is suitable for a wide range of power electronics applications including Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters, UPS Power Supplies, Motor Drives, High Voltage DC/DC Converters, and Switching Mode Power Supplies.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Material: Silicon Carbide (SiC)
- Compliance: RoHS Compliant
- Package: TO-247-3L
- Device Code: 35N120C
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 1200 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @20V | 48 | m | ||
| Continuous Drain Current | ID | 35 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 1200 | V | ||
| Gate-Source Voltage | VGSMAX | (Ta=25, unless otherwise noted) | -10 | +22 | V | |
| Recommended Gate-Source Voltage | VGSop | (Ta=25, unless otherwise noted) | -5 | +18 | V | |
| Continuous Drain Current | ID | (Tc=25) | 65 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 35 | A | ||
| Pulsed Drain Current | IDM | 130 | A | |||
| Total Power Dissipation | PD | (Tc=25) | 327 | W | ||
| Thermal Resistance Junction-Case | RJC | 0.4 | /W | |||
| Storage Temperature Range | TSTG | -55 | 175 | |||
| Operating Junction Temperature Range | TJ | -55 | 175 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=100uA | 1200 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=1200V, VGS=0V, TJ=25 | 5 | 100 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=-10/+22, VDS=0V, TJ=25 | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=10mA, Tj=25 | 2.0 | 3.1 | 4.0 | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=10mA, Tj=175 | 2.1 | V | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=20V, ID=20A, Tj=25 | 48 | 60 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=20V, ID=20A, Tj=175 | 65 | 79 | m | |
| Input Capacitance | Ciss | VDS=800V, VGS=0V, f=1MHz | 2560 | pF | ||
| Output Capacitance | Coss | VDS=800V, VGS=0V, f=1MHz | 121 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=800V, VGS=0V, f=1MHz | 8 | pF | ||
| Total Gate Charge | Qg | VDS=800V, VGS=-5/+18V, ID=20A | 124 | nC | ||
| Gate-Source Charge | Qgs | VDS=800V, VGS=-5/+18V, ID=20A | 25 | nC | ||
| Gate-Drain Charge | Qgd | VDS=800V, VGS=-5/+18V, ID=20A | 47 | nC | ||
| Turn-On Delay Time | td(on) | VDS=800V, VGS=-5/+18V, ID=20A, RG=10 | 10.2 | ns | ||
| Rise Time | tr | VDS=800V, VGS=-5/+18V, ID=20A, RG=10 | 28.6 | ns | ||
| Turn-Off Delay Time | td(off) | VDS=800V, VGS=-5/+18V, ID=20A, RG=10 | 42.2 | ns | ||
| Fall Time | tf | VDS=800V, VGS=-5/+18V, ID=20A, RG=10 | 14 | ns | ||
| Turn-On Energy | Eon | VDS=800V, VGS=-5/+18V, ID=20A, RG=10 | 721 | uJ | ||
| Turn-Off Energy | Eoff | VDS=800V, VGS=-5/+18V, ID=20A, RG=10 | 118.6 | uJ | ||
| Total Switching Loss | Etot | VDS=800V, VGS=-5/+18V, ID=20A, RG=10 | 832.6 | uJ | ||
| Diode Forward Voltage | VSD | VGS=-5V, ISD=20A, TJ=25 | 4.4 | 7 | V | |
| Diode Forward Voltage | VSD | VGS=-5V, ISD=20A, TJ=175 | 3.8 | V | ||
| Reverse Recovery Time | trr | VGS=-5V/+18V, ISD=20A, VR=800V, di/dt=1000A/s | 19.4 | ns | ||
| Reverse Recovery Charge | Qrr | VGS=-5V/+18V, ISD=20A, VR=800V, di/dt=1000A/s | 0.16 | nC | ||
| Peak Reverse Recovery Current | Irrm | VGS=-5V/+18V, ISD=20A, VR=800V, di/dt=1000A/s | 24.4 | A | ||
| Reverse Recovery Energy | Erec | VGS=-5V/+18V, ISD=20A, VR=800V, di/dt=1000A/s | 17.1 | uJ | ||
| Package Information TO-247-3L | ||||||
| Dimension | Symbol | Units | Min. | Max. | Min. | Max. |
| A | A | mm | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | A1 | mm | 2.200 | 2.600 | 0.087 | 0.102 |
| b | b | mm | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | b1 | mm | 2.800 | 3.200 | 0.110 | 0.126 |
| b2 | b2 | mm | 1.800 | 2.200 | 0.071 | 0.087 |
| c | c | mm | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | c1 | mm | 1.900 | 2.100 | 0.075 | 0.083 |
| D | D | mm | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | E1 | mm | 3.500 | REF. | 0.138 | REF. |
| E2 | E2 | mm | 3.600 | REF. | 0.142 | REF. |
| L | L | mm | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | L1 | mm | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | L2 | mm | 20.300 | 20.600 | 0.799 | 0.811 |
| mm | 7.100 | 7.300 | 0.280 | 0.287 | ||
| e | e | mm | 5.450 | TYP. | 0.215 | TYP. |
| H | H | mm | 5.980 | REF. | 0.235 | REF. |
| h | h | mm | 0.000 | 0.300 | 0.000 | 0.012 |
2410121615_Siliup-SP35N120CTF_C22466830.pdf
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