P Channel MOSFET Siliup SP40P08P8 Featuring Low Gate Charge and High Current Capability in SOP 8L
Key Attributes
Model Number:
SP40P08P8
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
18A
RDS(on):
8.9mΩ@10V;13mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
289pF
Number:
1 P-Channel
Output Capacitance(Coss):
329pF
Input Capacitance(Ciss):
3.8nF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
69nC@10V
Mfr. Part #:
SP40P08P8
Package:
SOP-8L
Product Description
Product Overview
The SP40P08P8 is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching, low gate charge, and low RDS(on). This MOSFET is suitable for hard-switched and high-frequency circuits, including Uninterruptible Power Supply (UPS) systems. It comes in a SOP-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40P08P8
- Package Type: SOP-8L
- Marking: 40P08
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -40 | V | |||
| RDS(on) Typ. | @-10V | 8.9 | m | |||
| RDS(on) Typ. | @-4.5V | 13 | m | |||
| Continuous Drain Current | ID | -18 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -18 | A | |||
| Pulsed Drain Current | IDM | -72 | A | |||
| Power Dissipation | PD | 3 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 41.7 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -40 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.2 | -1.6 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-10A | 8.9 | 11.5 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-8A | 13 | 18 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-20V , VGS=0V , f=1MHz | 3800 | pF | ||
| Output Capacitance | Coss | 329 | pF | |||
| Reverse Transfer Capacitance | Crss | 289 | pF | |||
| Total Gate Charge | Qg | VDS=-20V , VGS=-10V , ID=-20A | 69 | nC | ||
| Gate-Source Charge | Qgs | 11 | nC | |||
| Gate-Drain Charge | Qg | 13 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-20V, VGS=-10V , RG=3, ID=-20A | 11 | nS | ||
| Rise Time | Tr | 81 | nS | |||
| Turn-Off Delay Time | Td(off) | 95 | nS | |||
| Fall Time | Tf | 73 | nS | |||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | -1.2 | V | ||
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | REF. | 1.27 | ||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP40P08P8_C41355191.pdf
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