Power management MOSFET Siliup SP30P13NJ 30V P Channel with tested avalanche energy and low resistance
Key Attributes
Model Number:
SP30P13NJ
Product Custom Attributes
Pd - Power Dissipation:
25W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V;22mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
300pF
Number:
1 P-Channel
Output Capacitance(Coss):
350pF
Input Capacitance(Ciss):
1.6nF
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SP30P13NJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description
Product Overview
The SP30P13NJ is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, this MOSFET features fast switching speeds and low on-resistance, with typical values of 13m at -10V and 22m at -4.5V. It is suitable for applications such as DC-DC converters and power management systems. The device is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications. It comes in a PDFN3X3-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30P13NJ
- Channel Type: P-Channel
- Voltage Rating: 30V
- Package: PDFN3X3-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | -30 | V | |||
| RDS(on)TYP | RDS(on) | -10V | 13 | m | ||
| RDS(on)TYP | RDS(on) | -4.5V | 22 | m | ||
| ID | ID | -16 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | -16 | A | |||
| Continuous Drain Current (Tc=100C) | ID | -10 | A | |||
| Pulse Drain Current Tested | IDM | -64 | A | |||
| Single Pulse Avalanche Energy | EAS | 1 | 156 | mJ | ||
| Dissipation (Tc=25C) | PD | 25 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 5 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.2 | -1.6 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-20A | 13 | 18 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-15A | 22 | 30 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 1600 | pF | ||
| Output Capacitance | Coss | 350 | pF | |||
| Reverse Transfer Capacitance | Crss | 300 | pF | |||
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-10A | 30 | nC | ||
| Gate-Source Charge | Qgs | 5.5 | ||||
| Gate-Drain Charge | Qgd | 8 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V,VGS=-10V,RG=3, ID=-10A | 10 | nS | ||
| Rise Time | Tr | 60 | ||||
| Turn-Off Delay Time | Td(off) | 52 | ||||
| Fall Time | Tf | 70 | ||||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -16 | A | |||
| Reverse recover time | Trr | IS=-5A, di/dt=100A/us, TJ=25 | 15 | nS | ||
| Reverse recovery charge | Qrr | 5 | nC | |||
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 - 0.850 | 0.026 - 0.033 | ||||
| A1 | 0.152 REF. | 0.006 REF. | ||||
| A2 | 0 ~ 0.05 | 0 ~ 0.002 | ||||
| D | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| D1 | 2.300 - 2.600 | 0.091 - 0.102 | ||||
| E | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| E1 | 3.150 - 3.450 | 0.124 - 0.136 | ||||
| E2 | 1.535 - 1.935 | 0.060 - 0.076 | ||||
| b | 0.200 - 0.400 | 0.008 - 0.016 | ||||
| e | 0.550 - 0.750 | 0.022 - 0.030 | ||||
| L | 0.300 - 0.500 | 0.012 - 0.020 | ||||
| L1 | 0.180 - 0.480 | 0.007 - 0.019 | ||||
| L2 | 0 ~ 0.100 | 0 ~ 0.004 | ||||
| L3 | 0 ~ 0.100 | 0 ~ 0.004 | ||||
| H | 0.315 - 0.515 | 0.012 - 0.020 | ||||
| 9 - 13 | 9 - 13 | |||||
Note: 1. The EAS test condition is VDD=-15V, VG=-10V, L=0.5mH, Rg=25
2504101957_Siliup-SP30P13NJ_C41355023.pdf
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