Power 30 Volt N Channel MOSFET with Low Gate Charge and High Continuous Drain Current Siliup SP30N02TH
Key Attributes
Model Number:
SP30N02TH
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
130A
RDS(on):
2mΩ@10V;3mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
453pF
Number:
1 N-channel
Output Capacitance(Coss):
558pF
Pd - Power Dissipation:
75W
Input Capacitance(Ciss):
4.5nF
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
SP30N02TH
Package:
TO-252-2L
Product Description
Product Overview
The SP30N02TH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) at both 10V and 4.5V gate drive. This MOSFET is 100% tested for single pulse avalanche energy. It is suitable for applications such as DC-DC converters and load switching.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 30N02
- Package: TO-252
- Material: Silicon
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| RDS(on) | RDS(on) | @10V | 2 | m | ||
| RDS(on) | RDS(on) | @4.5V | 3 | m | ||
| Continuous Drain Current | ID | 130 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 30 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (TC=25) | 130 | A | ||
| Continuous Drain Current | ID | (TC=100) | 87 | A | ||
| Pulsed Drain Current | IDM | 520 | A | |||
| Single Pulse Avalanche Energy | EAS | 296 | mJ | |||
| Power Dissipation | PD | (TC=25) | 75 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.7 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=30A | - | 2 | 2.5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=20A | - | 3 | 4 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 4500 | - | pF |
| Output Capacitance | Coss | - | 558 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 453 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=20A | - | 70 | - | nC |
| Gate-Source Charge | Qgs | - | 12 | - | nC | |
| Gate-Drain Charge | Qg d | - | 16.3 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=15V, VGS=4.5V , RG=6, ID=30A | - | 11 | - | nS |
| Rise Time | Tr | - | 120 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 25 | - | nS | |
| Fall Time | Tf | - | 60 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 130 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 43 | - | nS |
| Reverse Recovery Charge | Qrr | - | 37 | - | nC | |
| Package Information (TO-252) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 2.200 | 2.400 | 0.087 | 0.094 | ||
| A1 | 0.000 | 0.127 | 0.000 | 0.005 | ||
| b | 0.660 | 0.860 | 0.026 | 0.034 | ||
| c | 0.460 | 0.580 | 0.018 | 0.023 | ||
| D | 6.500 | 6.700 | 0.256 | 0.264 | ||
| D1 | 5.100 | 5.460 | 0.201 | 0.215 | ||
| D2 | 4.830 REF. | 0.190 REF. | ||||
| E | 6.000 | 6.200 | 0.236 | 0.244 | ||
| e | 2.186 | 2.386 | 0.086 | 0.094 | ||
| L | 9.800 | 10.400 | 0.386 | 0.409 | ||
| L1 | 2.900 REF. | 0.114 REF. | ||||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 | ||
| L3 | 1.600 REF. | 0.063 REF. | ||||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 | ||
| 1.100 | 1.300 | 0.043 | 0.051 | |||
| 0 | 8 | 0 | 8 | |||
| h | 0.000 | 0.300 | 0.000 | 0.012 | ||
| V | 5.350 REF. | 0.211 REF. | ||||
2504101957_Siliup-SP30N02TH_C41354851.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
