Siliup SP40P65T1 P Channel MOSFET 40V Drain Source Voltage in SOT 23 3L Package for Power Management
Key Attributes
Model Number:
SP40P65T1
Product Custom Attributes
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@10V;85mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 P-Channel
Output Capacitance(Coss):
52pF
Pd - Power Dissipation:
2W
Input Capacitance(Ciss):
520pF
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
SP40P65T1
Package:
SOT-23-3L
Product Description
Product Overview
The SP40P65T1 is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capabilities in a surface mount SOT-23-3L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP40P65T1
- Type: P-Channel MOSFET
- Package: SOT-23-3L
- Marking: 40P65
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | -40 | V | |
| RDS(on) Typ | -10V | 65 | m | |
| RDS(on) Typ | -4.5V | 85 | m | |
| ID | -3 | A | ||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||
| Drain-Source Voltage | VDSS | -40 | V | |
| Gate-Source Voltage | VGSS | 20 | V | |
| Continuous Drain Current | ID | -3 | A | |
| Pulse Drain Current | IDM | Tested | -12 | A |
| Power Dissipation | PD | 1 | W | |
| Thermal Resistance Junction-to-Ambient | RJA | 125 | C/W | |
| Storage Temperature Range | TSTG | -55 to 150 | C | |
| Operating Junction Temperature Range | TJ | -55 to 150 | C | |
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -40 | V |
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V | - | -1 uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | 100 nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -1.0 to -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID =-3A | 65 to 85 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID =-2A | 85 to 110 | m |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 520 | pF |
| Output Capacitance | Coss | 52 | pF | |
| Reverse Transfer Capacitance | Crss | 41 | pF | |
| Total Gate Charge | Qg | VDS=-20V , VGS=-10V , ID=-3A | 9 | nC |
| Gate-Source Charge | Qgs | 1 | - | |
| Gate-Drain Charge | Qg d | 2.5 | - | |
| Switching Characteristics | ||||
| Turn-On Delay Time | td(on) | VDD=-20V VGS=-10V , RG=3.3 , ID=-3A | 4.2 | nS |
| Turn-On Rise Time | tr | 6 | - | |
| Turn-Off Delay Time | td(off) | 26.8 | - | |
| Turn-Off Fall Time | tf | 20.6 | - | |
| Source-Drain Diode Characteristics | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | -1.2 V |
| Package Information (SOT-23-3L) | ||||
| Dimension A | Min. 1.050, Max. 1.250 | mm | ||
| Dimension A1 | Min. 0.000, Max. 0.100 | mm | ||
| Dimension A2 | Min. 1.050, Max. 1.150 | mm | ||
| Dimension b | Min. 0.300, Max. 0.500 | mm | ||
| Dimension c | Min. 0.100, Max. 0.200 | mm | ||
| Dimension D | Min. 2.820, Max. 3.020 | mm | ||
| Dimension E | Min. 1.500, Max. 1.700 | mm | ||
| Dimension E1 | Min. 2.650, Max. 2.950 | mm | ||
| Dimension e | Typ. 0.950 | mm | ||
| Dimension e1 | Min. 1.800, Max. 2.000 | mm | ||
| Dimension L | Min. 0.300, Max. 0.600 | mm | ||
| Dimension | 0 to 8 | |||
| Order Information | ||||
| Device | Package | Unit/Tape | ||
| SP40P65T1 | SOT-23-3L | 3000 | ||
2504101957_Siliup-SP40P65T1_C41354814.pdf
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