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quality P Channel MOSFET Siliup SP2006KT7 Featuring 20V Drain Source Voltage and 2KV ESD Protection for Power Management factory
quality P Channel MOSFET Siliup SP2006KT7 Featuring 20V Drain Source Voltage and 2KV ESD Protection for Power Management factory

P Channel MOSFET Siliup SP2006KT7 Featuring 20V Drain Source Voltage and 2KV ESD Protection for Power Management

Key Attributes
Model Number: SP2006KT7
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
RDS(on):
650mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 P-Channel
Output Capacitance(Coss):
20pF
Input Capacitance(Ciss):
75pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
1.25nC@4.5V
Mfr. Part #:
SP2006KT7
Package:
SOT-723
Product Description

Product Overview

The SP2006KT7 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This surface mount device offers high power and current handling capability, along with ESD protection up to 2KV. It is designed for applications such as battery switches and DC/DC converters.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: P-Channel MOSFET
  • Package: SOT-723
  • ESD Protection: 2KV

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -20 V
Static Drain-Source On-Resistance RDS(on) @-4.5V 650 750 m
Static Drain-Source On-Resistance RDS(on) @-2.5V 850 1000 m
Continuous Drain Current ID -0.66 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS 12 V
Continuous Drain Current ID -0.66 A
Pulse Drain Current IDM Tested -2.64 A
Power Dissipation PD 150 mW
Thermal Resistance Junction-to-Ambient RJA 833 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250A -20 V
Drain-Source Leakage Current IDSS VDS=-16V , VGS=0V -1 uA
Gate-Source Leakage Current IGSS VGS=12V , VDS=0V 10 uA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250A -0.35 -0.65 -1.00 V
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-500mA 650 750 m
Static Drain-Source On-Resistance RDS(ON) VGS=-2.5V , ID=-200mA 850 1000 m
Input Capacitance Ciss VDS=-10V , VGS=0V , f=1MHz 75 pF
Output Capacitance Coss 20
Reverse Transfer Capacitance Crss 14
Total Gate Charge Qg VDS=-10V , VGS=-4.5V , ID=-0.5A 1.25 nC
Gate-Source Charge Qgs 0.35
Gate-Drain Charge Qg 0.27
Turn-On Delay Time td(on) VDD=-10V VGS=-4.5V , RG=3 , RL=2.5 5 nS
Turn-On Rise Time tr 19
Turn-Off Delay Time td(off) 15
Turn-Off Fall Time tf 24
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Package Information (SOT-723)
Symbol Dimensions (mm) Min. Max.
A 0.430 0.500
A1 0.000 0.050
b 0.170 0.270
b1 0.270 0.370
c 0.080 0.150
D 1.150 1.250
E 1.150 1.250
E1 0.750 0.850
e 0.800 (TYP.)
7 (REF.)

2504101957_Siliup-SP2006KT7_C41355143.pdf

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