P Channel MOSFET Siliup SP30P25T8 30V Surface Mount Device Designed for Battery Switch and Converter
Key Attributes
Model Number:
SP30P25T8
Product Custom Attributes
Pd - Power Dissipation:
1.5W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@10V;36mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
93pF
Number:
1 P-Channel
Output Capacitance(Coss):
130pF
Input Capacitance(Ciss):
870pF
Gate Charge(Qg):
7.8nC@4.5V
Mfr. Part #:
SP30P25T8
Package:
SOT-89-3L
Product Description
Product Overview
The SP30P25T8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a low on-resistance and robust performance characteristics.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP30P25T8
- Technology: P-Channel MOSFET
- Package: SOT-89
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @ -10V | 25 | m | ||
| On-Resistance (Typical) | RDS(on)TYP | @ -4.5V | 36 | m | ||
| Continuous Drain Current | ID | -6 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | -6 | A | |||
| Pulse Drain Current | IDM | Tested | -24 | A | ||
| Power Dissipation | PD | 1.5 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 83.3 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID =-4A | - | 25 | 32 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID =-2A | - | 36 | 45 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 870 | - | pF |
| Output Capacitance | Coss | - | 130 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 93 | - | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-4.5V , ID=-5A | - | 7.8 | - | nC |
| Gate-Source Charge | Qgs | - | 2.7 | - | ||
| Gate-Drain Charge | Qg d | - | 2.8 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-15V VGS=-10V , RG=6 , ID=-1A | - | 6.5 | - | nS |
| Turn-On Rise Time | tr | - | 8.8 | - | ||
| Turn-Off Delay Time | td(off) | - | 73 | - | ||
| Turn-Off Fall Time | tf | - | 44 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Package Outline (SOT-89) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 1.400 | 1.600 | ||||
| b | 0.320 | 0.520 | ||||
| b1 | 0.400 | 0.580 | ||||
| c | 0.350 | 0.440 | ||||
| D | 4.400 | 4.600 | ||||
| D1 | 1.550 | REF. | ||||
| D2 | 1.750 | REF. | ||||
| E | 2.300 | 2.600 | ||||
| E1 | 3.940 | 4.250 | ||||
| E2 | 1.900 | REF. | ||||
| e | 1.500 | TYP. | ||||
| e1 | 3.000 | TYP. | ||||
| L | 0.900 | 1.200 | ||||
| 45 | ||||||
2504101957_Siliup-SP30P25T8_C41354961.pdf
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