Siliup SP30N05TH N Channel MOSFET 30 Volt with Low RDS on and Single Pulse Avalanche Energy Testing
Product Overview
The SP30N05TH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) with typical values of 5m at 10V and 6.5m at 4.5V. This MOSFET is designed for applications such as DC-DC converters and load switching, offering 100% single pulse avalanche energy testing. The device is supplied in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30N05TH
- Channel Type: N-Channel
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 30 | V | ||||
| RDS(on)TYP | @10V | 5 | m | |||
| RDS(on)TYP | @4.5V | 6.5 | m | |||
| ID | 65 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 30 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (TC=25) | 65 | A | ||
| Continuous Drain Current | ID | (TC=100) | 43 | A | ||
| Pulsed Drain Current | IDM | 260 | A | |||
| Single Pulse Avalanche Energy | EAS | 1 | 14 | mJ | ||
| Power Dissipation | PD | (TC=25) | 35 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 3.6 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 5 | 6.5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=10A | - | 6.5 | 9 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 1460 | - | pF |
| Output Capacitance | Coss | - | 200 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 180 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=30A | - | 34 | - | nC |
| Gate-Source Charge | Qgs | - | 6.5 | - | nC | |
| Gate-Drain Charge | Qgd | - | 7 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=15V, VGS=4.5V , RG=6, ID=30A | - | 7.5 | - | nS |
| Rise Time | Tr | - | 14.5 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 35.2 | - | nS | |
| Fall Time | Tf | - | 9.6 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 65 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 11 | - | nS |
| Reverse Recovery Charge | Qrr | - | 2.1 | - | nC | |
| TO-252 Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. | ||
2504101957_Siliup-SP30N05TH_C41354867.pdf
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