Siliup SP30N05TH N Channel MOSFET 30 Volt with Low RDS on and Single Pulse Avalanche Energy Testing

Key Attributes
Model Number: SP30N05TH
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
65A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5mΩ@10V;6.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
180pF
Number:
1 N-channel
Output Capacitance(Coss):
200pF
Pd - Power Dissipation:
75W
Input Capacitance(Ciss):
1.46nF
Gate Charge(Qg):
34nC@10V
Mfr. Part #:
SP30N05TH
Package:
TO-252-2L
Product Description

Product Overview

The SP30N05TH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) with typical values of 5m at 10V and 6.5m at 4.5V. This MOSFET is designed for applications such as DC-DC converters and load switching, offering 100% single pulse avalanche energy testing. The device is supplied in a TO-252 package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP30N05TH
  • Channel Type: N-Channel
  • Package: TO-252

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
V(BR)DSS 30 V
RDS(on)TYP @10V 5 m
RDS(on)TYP @4.5V 6.5 m
ID 65 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25, unless otherwise noted) 30 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID (TC=25) 65 A
Continuous Drain Current ID (TC=100) 43 A
Pulsed Drain Current IDM 260 A
Single Pulse Avalanche Energy EAS 1 14 mJ
Power Dissipation PD (TC=25) 35 W
Thermal Resistance Junction-to-Case RJC 3.6 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=20A - 5 6.5 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=10A - 6.5 9 m
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 1460 - pF
Output Capacitance Coss - 200 - pF
Reverse Transfer Capacitance Crss - 180 - pF
Total Gate Charge Qg VDS=15V , VGS=10V , ID=30A - 34 - nC
Gate-Source Charge Qgs - 6.5 - nC
Gate-Drain Charge Qgd - 7 - nC
Turn-On Delay Time Td(on) VDD=15V, VGS=4.5V , RG=6, ID=30A - 7.5 - nS
Rise Time Tr - 14.5 - nS
Turn-Off Delay Time Td(off) - 35.2 - nS
Fall Time Tf - 9.6 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 65 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 11 - nS
Reverse Recovery Charge Qrr - 2.1 - nC
TO-252 Package Information
Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 4.830 REF. 0.190 REF.
E 6.000 6.200 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 REF. 0.114 REF.
L2 1.400 1.700 0.055 0.067
L3 1.600 REF. 0.063 REF.
L4 0.600 1.000 0.024 0.039
1.100 1.300 0.043 0.051
0 8 0 8
h 0.000 0.300 0.000 0.012
V 5.350 REF. 0.211 REF.

2504101957_Siliup-SP30N05TH_C41354867.pdf

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