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quality n channel power mosfet with single pulse avalanche energy test Siliup SP011N01GHTO 110V toll package factory
quality n channel power mosfet with single pulse avalanche energy test Siliup SP011N01GHTO 110V toll package factory

n channel power mosfet with single pulse avalanche energy test Siliup SP011N01GHTO 110V toll package

Key Attributes
Model Number: SP011N01GHTO
Product Custom Attributes
Drain To Source Voltage:
110V
Current - Continuous Drain(Id):
375A
RDS(on):
1.1mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
137pF
Number:
1 N-channel
Output Capacitance(Coss):
3.4nF
Input Capacitance(Ciss):
12.7nF
Pd - Power Dissipation:
396W
Gate Charge(Qg):
216nC@10V
Mfr. Part #:
SP011N01GHTO
Package:
TOLL
Product Description

Product Overview

The SP011N01GHTO is a 110V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits, and power management. It is available in the TOLL package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP011N01GHTO
  • Technology: Advanced Split Gate Trench Technology
  • Channel Type: N-Channel
  • Package: TOLL

Technical Specifications

Parameter Symbol Rating Unit Test Condition
Drain-Source Voltage VDS 110 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID 375 A
Continuous Drain Current (Tc=100) ID 250 A
Pulsed Drain Current IDM 1500 A
Single Pulse Avalanche Energy EAS 2250 mJ VDD=50V,VGS=10V,L=0.5mH,RG=25
Power Dissipation (Tc=25) PD 396 W
Thermal Resistance Junction-to-Case RJC 0.31 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Drain-Source Breakdown Voltage BVDSS 110 V VGS=0V , ID=250uA
Drain Cut-Off Current IDSS 1 A VDS=90V , VGS=0V , TJ=25
Gate Leakage Current IGSS 100 nA VGS=20V , VDS=0V
Gate Threshold Voltage VGS(th) 2.0 - 4.0 V VGS=VDS , ID =250uA
Drain-Source ON Resistance RDS(ON) 1.1 - 1.4 m VGS=10V , ID=50A
Input Capacitance Ciss 12700 pF VDS=55V , VGS=0V , f=1MHz
Output Capacitance Coss 3400 pF VDS=55V , VGS=0V , f=1MHz
Reverse Transfer Capacitance Crss 137 pF VDS=55V , VGS=0V , f=1MHz
Total Gate Charge Qg 216 nC VDS=55V , VGS=10V , ID=100A
Gate-Source Charge Qgs 68 nC VDS=55V , VGS=10V , ID=100A
Gate-Drain Charge Qg d 69 nC VDS=55V , VGS=10V , ID=100A
Turn-On Delay Time td(on) 81 nS VDD=55V, VGS=10V , RG=6, ID=100A
Rise Time tr 176 nS VDD=55V, VGS=10V , RG=6, ID=100A
Turn-Off Delay Time td(off) 165 nS VDD=55V, VGS=10V , RG=6, ID=100A
Fall Time tf 62 nS VDD=55V, VGS=10V , RG=6, ID=100A
Source-Drain Diode Forward Voltage VSD 1.2 V IS = 1A, VGS = 0V
Maximum Body-Diode Continuous Current IS 375 A
Reverse Recovery Time Trr 87 nS IS=100A, di/dt=100A/us, TJ=25
Reverse Recovery Charge Qrr 201 nC IS=100A, di/dt=100A/us, TJ=25

Package Information (TOLL)

Symbol Dimensions (mm)
A 2.20 - 2.40
b 0.65 - 0.85
C 0.508 REF
D 10.25 - 10.55
D1 2.85 - 3.15
E 9.75 - 10.05
E1 9.65 - 9.95
E2 8.95 - 9.25
E3 7.25 - 7.55
e 1.20 BSC
F 1.05 - 1.35
H 11.55 - 11.85
H1 6.03 - 6.33
H2 6.85 - 7.15
H3 3.00 BSC
L 1.55 - 1.85
L1 0.55 - 0.85
L2 0.45 - 0.75
M 0.08 REF
8 - 12
K 4.25 - 4.55

Order Information

Device Package Unit/Tape
SP011N01GHTO TOLL 2000

2506271720_Siliup-SP011N01GHTO_C49258028.pdf

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