Power MOSFET Siliup SP010N13GTH 100V N Channel Featuring Low RDSon and High Avalanche Energy Testing
Key Attributes
Model Number:
SP010N13GTH
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
45A
RDS(on):
13mΩ@10V;16mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Output Capacitance(Coss):
379pF
Input Capacitance(Ciss):
1.225nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
SP010N13GTH
Package:
TO-252
Product Description
Product Overview
The SP010N13GTH is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for power switching applications, battery management systems, and uninterruptible power supplies, benefiting from 100% single pulse avalanche energy testing for enhanced reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N13GTH
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| Drain-Source ON Resistance | RDS(on) | @10V | 13 | m | ||
| Drain-Source ON Resistance | RDS(on) | @4.5V | 16 | m | ||
| Continuous Drain Current | ID | 45 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25 unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 45 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 30 | A | ||
| Pulsed Drain Current | IDM | 180 | A | |||
| Single Pulse Avalanche Energy | EAS | 1 | 144 | mJ | ||
| Power Dissipation | PD | (Tc=25) | 75 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.67 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.0 | 1.8 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 13 | 17 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 10A | - | 16 | 21 | m |
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 1225 | - | pF |
| Output Capacitance | Coss | - | 379 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 17 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=20A | - | 14 | - | nC |
| Gate-Source Charge | Qgs | - | 5 | - | nC | |
| Gate-Drain Charge | Qgd | - | 2.7 | - | nC | |
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =50V, ID=20A RG = 2.2 | - | 38 | - | nS |
| Rise Time | tr | - | 12 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 51 | - | nS | |
| Fall Time | tf | - | 17 | - | nS | |
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 45 | A | |
| Reverse Recovery Time | trr | IS=20A, di/dt=100A/us, TJ=25 | - | 40 | - | nS |
| Reverse Recovery Charge | Qrr | - | 42 | - | nC | |
| Package Information | Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|---|
| Min. | Max. | Min. | Max. | ||
| A | 2.200 | 2.400 | 0.087 | 0.094 | |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 | |
| b | 0.660 | 0.860 | 0.026 | 0.034 | |
| c | 0.460 | 0.580 | 0.018 | 0.023 | |
| D | 6.500 | 6.700 | 0.256 | 0.264 | |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 | |
| D2 | 4.830 REF. | 0.190 REF. | |||
| E | 6.000 | 6.200 | 0.236 | 0.244 | |
| e | 2.186 | 2.386 | 0.086 | 0.094 | |
| L | 9.800 | 10.400 | 0.386 | 0.409 | |
| L1 | 2.900 REF. | 0.114 REF. | |||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 | |
| L3 | 1.600 REF. | 0.063 REF. | |||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 | |
| 1.100 | 1.300 | 0.043 | 0.051 | ||
| 0 | 8 | 0 | 8 | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 | |
| V | 5.350 REF. | 0.211 REF. |
2504101957_Siliup-SP010N13GTH_C22466801.pdf
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