Power MOSFET SP40N01LGTO 40V N Channel Featuring Low RDSon and Fast Switching for Power Applications

Key Attributes
Model Number: SP40N01LGTO
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
235A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
63pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.025nF
Pd - Power Dissipation:
116W
Output Capacitance(Coss):
1.683nF
Gate Charge(Qg):
78nC@10V
Mfr. Part #:
SP40N01LGTO
Package:
TOLL-8L
Product Description

Product Overview

The SP40N01LGTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management systems.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP40N01LGTO
  • Technology: Advanced Split Gate Trench Technology
  • Package: TOLL

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
V(BR)DSS 40 V
RDS(on)TYP @10V 1.2 m
RDS(on)TYP @4.5V 1.6 m
ID 235 A
Absolute Maximum Ratings
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID 235 A
Continuous Drain Current (Tc=100) ID 150 A
Pulsed Drain Current IDM 940 A
Single Pulse Avalanche Energy EAS 900 mJ
Power Dissipation (Tc=25) PD 116 W
Thermal Resistance Junction-to-Case RJC 1.08 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 45 - V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1 1.7 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=20A - 1.2 1.5 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=20A - 1.6 2.1 m
Dynamic Characteristics
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 5025 - pF
Output Capacitance Coss - 1683 - pF
Reverse Transfer Capacitance Crss - 63 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=85A - 78 - nC
Gate-Source Charge Qgs - 27 -
Gate-Drain Charge Qg - 16 -
Switching Characteristics
Turn-On Delay Time Td(on) VDD=20V , VGS=10V , RG=1.6, ID=85A - 12.3 - nS
Rise Time Tr - 8 -
Turn-Off Delay Time Td(off) - 47.5 - nS
Fall Time Tf - 8.8 -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 235 A
Reverse Recovery Time Trr IS=50A , di/dt=100A/us , TJ=25 - 64 - nS
Reverse Recovery Charge Qrr - 86.8 - nC
Package Information (TOLL)
Symbol Dimensions (mm) Min. Nom. Max.
A 2.20 2.30 2.40
b 0.65 0.75 0.85
C 0.508 REF
D 10.25 10.40 10.55
D1 2.85 3.00 3.15
E 9.75 9.90 10.05
E1 9.65 9.80 9.95
E2 8.95 9.10 9.25
E3 7.25 7.40 7.55
e 1.20 BSC
F 1.05 1.20 1.35
H 11.55 11.70 11.85
H1 6.03 6.18 6.33
H2 6.85 7.00 7.15
H3 3.00 BSC
L 1.55 1.70 1.85
L1 0.55 0.7 0.85
L2 0.45 0.6 0.75
M 0.08 REF.
8 10 12
K 4.25 4.40 4.55

2508111740_Siliup-SP40N01LGTO_C50199171.pdf

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