150V N Channel Power MOSFET SP015N50GHTH with Stability Uniformity and Single Pulse Avalanche Energy
Key Attributes
Model Number:
SP015N50GHTH
Product Custom Attributes
Drain To Source Voltage:
150V
Configuration:
-
Current - Continuous Drain(Id):
17A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
1 N-channel
Output Capacitance(Coss):
82pF
Input Capacitance(Ciss):
753pF
Pd - Power Dissipation:
33W
Gate Charge(Qg):
13nC@0V
Mfr. Part #:
SP015N50GHTH
Package:
TO-252
Product Description
Product Overview
The SP015N50GHTH is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features extremely low switching loss, excellent stability and uniformity, and utilizes advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as consumer electronic power supplies, motor control, synchronous rectification, and isolated DC/DC converters. The product is available in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015N50GHTH
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
| Drain-Source Voltage | VDS | - | - | - | 150 | V |
| Gate-Source Voltage | VGS | - | - | - | 20 | V |
| Continuous Drain Current (Tc=25) | ID | - | - | - | 17 | A |
| Continuous Drain Current (Tc=100) | ID | - | - | - | 11 | A |
| Pulsed Drain Current | IDM | - | - | - | 68 | A |
| Single Pulse Avalanche Energy | EAS | - | - | - | 90 | mJ |
| Power Dissipation (Tc=25) | PD | - | - | - | 33 | W |
| Thermal Resistance Junction-to-Case | RJC | - | - | 2.78 | - | /W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=250 A | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=120 V, VGS=0 V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20 V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250 A | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10 V, ID=9 A | - | 50 | 60 | m |
| Input Capacitance | Ciss | VGS=0 V, VDS=75 V, f=1 MHz | - | 753 | - | pF |
| Output Capacitance | Coss | - | - | 82 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 16 | - | pF |
| Total Gate Charge | Qg | ID=10 A, VDS=75 V, VGS=10 V | - | 13 | - | nC |
| Gate-Source Charge | Qgs | - | - | 5.2 | - | nC |
| Gate-Drain Charge | Qg | - | - | 3.8 | - | nC |
| Turn-On Delay Time | td(on) | VGS=10 V, VDS=75 V, RG=2.5 ID=2 A | - | 16 | - | nS |
| Rise Time | tr | - | - | 42 | - | nS |
| Turn-Off Delay Time | td(off) | - | - | 24 | - | nS |
| Fall Time | tf | - | - | 4.8 | - | nS |
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 17 | A |
| Reverse Recovery Time | Trr | IS=10 A,di/dt=100 A/s | - | 65.8 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 179 | - | nC |
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. |
2410311049_Siliup-SP015N50GHTH_C42372363.pdf
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