High Reliability Siliup SP010P16GHTD 100V P Channel Power MOSFET with Single Pulse Avalanche Testing
Key Attributes
Model Number:
SP010P16GHTD
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
296pF
Number:
1 P-Channel
Output Capacitance(Coss):
752pF
Pd - Power Dissipation:
180W
Input Capacitance(Ciss):
6.825nF
Gate Charge(Qg):
98nC@10V
Mfr. Part #:
SP010P16GHTD
Package:
TO-263
Product Description
Product Overview
The SP010P16GHTD is a 100V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching speeds, low gate charge, and low RDS(on). This MOSFET is ideal for PWM applications, hard-switched, and high-frequency circuits, as well as power management solutions. It features 100% single pulse avalanche energy testing for enhanced reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 010P16GH
- Package: TO-263
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | -100 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @-10V | 16 | m | ||
| Continuous Drain Current | ID | -60 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | -60 | A | |||
| Continuous Drain Current (Tc=100) | ID | -40 | A | |||
| Pulsed Drain Current | IDM | -240 | A | |||
| Single Pulse Avalanche Energy | EAS | 625 | mJ | |||
| Power Dissipation (Tc=25) | PD | 180 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.69 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID= -250uA | -100 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-80V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID = -250uA | -2 | -3 | -4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID= -20A | 16 | 20 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-50V , VGS=0V , f=1MHz | 6825 | pF | ||
| Output Capacitance | Coss | 752 | pF | |||
| Reverse Transfer Capacitance | Crss | 296 | pF | |||
| Total Gate Charge | Qg | VDS=-50V , VGS=10V , ID=-20A | 98 | nC | ||
| Gate-Source Charge | Qgs | 26 | nC | |||
| Gate-Drain Charge | Qgd | 13 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-50V , VGS=10V , RG=1.6,ID=-20A | 16 | nS | ||
| Rise Time | Tr | 58 | nS | |||
| Turn-Off Delay Time | Td(off) | 145 | nS | |||
| Fall Time | Tf | 56 | nS | |||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -60 | A | |||
| Reverse Recovery Time | Trr | IS=-20A, di/dt=100A/us, TJ=25 | 96 | nS | ||
| Reverse Recovery Charge | Qrr | 205 | nC | |||
| Package Information (TO-263) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.470 - 4.670 | 0.176 - 0.184 | ||||
| A1 | 0.000 - 0.150 | 0.000 - 0.006 | ||||
| B | 1.120 - 1.420 | 0.044 - 0.056 | ||||
| b | 0.710 - 0.910 | 0.028 - 0.036 | ||||
| b1 | 1.170 - 1.370 | 0.046 - 0.054 | ||||
| c | 0.310 - 0.530 | 0.012 - 0.021 | ||||
| c1 | 1.170 - 1.370 | 0.046 - 0.054 | ||||
| D | 10.010 - 10.310 | 0.394 - 0.406 | ||||
| E | 8.500 - 8.900 | 0.335 - 0.350 | ||||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 - 5.180 | 0.196 - 0.204 | ||||
| L | 14.940 - 15.500 | 0.588 - 0.610 | ||||
| L1 | 4.950 - 5.450 | 0.195 - 0.215 | ||||
| L2 | 2.340 - 2.740 | 0.092 - 0.108 | ||||
| L3 | 1.300 - 1.700 | 0.051 - 0.067 | ||||
| 0 - 8 | 0 - 8 | |||||
| V | 5.600 REF. | 0.220 REF. | ||||
2504101957_Siliup-SP010P16GHTD_C42372355.pdf
Related Products
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
