Low On Resistance P Channel MOSFET 30V Drain Source Voltage Siliup SP30P11NJ for Power Management Solutions
Product Overview
The SP30P11NJ is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed and low On-Resistance, making it suitable for applications such as DC-DC Converters and Power Management. The device is 100% tested for single pulse avalanche energy and is available in a PDFN3X3-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Model: SP30P11NJ
- Package: PDFN3X3-8L
- Device Code: 30P11
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| On-Resistance (Typ.) | RDS(on)TYP | @-10V | 11 | m | ||
| On-Resistance (Typ.) | RDS(on)TYP | @-4.5V | 17 | m | ||
| Continuous Drain Current | ID | -20 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | -20 | A | |||
| Continuous Drain Current (Tc=100C) | ID | -13 | A | |||
| Pulse Drain Current Tested | IDM | -80 | A | |||
| Single Pulse Avalanche Energy | EAS | 169 | mJ | |||
| Dissipation (Tc=25C) | PD | 30 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 4.2 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-10A | 11 | 15 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-6A | 17 | 22 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 1915 | pF | ||
| Output Capacitance | Coss | 300 | pF | |||
| Reverse Transfer Capacitance | Crss | 210 | pF | |||
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-5A | 25 | nC | ||
| Gate-Source Charge | Qgs | 5 | ||||
| Gate-Drain Charge | Qg d | 6 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V, VGS=-10V ,RG=3, ID=-10A | 9 | nS | ||
| Rise Time | Tr | 11 | ||||
| Turn-Off Delay Time | Td(off) | 44 | ||||
| Fall Time | Tf | 21 | ||||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -20 | A | |||
| Reverse recover time | Trr | IS=-2.8A, di/dt=100A/us, Tj=25 | 64 | nS | ||
| Reverse recovery charge | Qrr | 25 | nC | |||
| PDFN3X3-8L Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 0.650 | 0.850 | 0.026 | 0.033 |
| A1 | 0.152 | REF. | 0.006 | REF. |
| A2 | 0~0.05 | 0~0.002 | ||
| D | 2.900 | 3.100 | 0.114 | 0.122 |
| D1 | 2.300 | 2.600 | 0.091 | 0.102 |
| E | 2.900 | 3.100 | 0.114 | 0.122 |
| E1 | 3.150 | 3.450 | 0.124 | 0.136 |
| E2 | 1.535 | 1.935 | 0.060 | 0.076 |
| b | 0.200 | 0.400 | 0.008 | 0.016 |
| e | 0.550 | 0.750 | 0.022 | 0.030 |
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | 0.180 | 0.480 | 0.007 | 0.019 |
| L2 | 0~0.100 | 0~0.004 | ||
| L3 | 0~0.100 | 0~0.004 | ||
| H | 0.315 | 0.515 | 0.012 | 0.020 |
| 9 | 13 | 9 | 13 | |
2504101957_Siliup-SP30P11NJ_C41355018.pdf
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