Low On Resistance P Channel MOSFET 30V Drain Source Voltage Siliup SP30P11NJ for Power Management Solutions

Key Attributes
Model Number: SP30P11NJ
Product Custom Attributes
Pd - Power Dissipation:
30W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V;17mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
210pF
Number:
1 P-Channel
Output Capacitance(Coss):
300pF
Input Capacitance(Ciss):
1.915nF
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
SP30P11NJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description

Product Overview

The SP30P11NJ is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed and low On-Resistance, making it suitable for applications such as DC-DC Converters and Power Management. The device is 100% tested for single pulse avalanche energy and is available in a PDFN3X3-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: P-Channel MOSFET
  • Model: SP30P11NJ
  • Package: PDFN3X3-8L
  • Device Code: 30P11

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -30 V
On-Resistance (Typ.) RDS(on)TYP @-10V 11 m
On-Resistance (Typ.) RDS(on)TYP @-4.5V 17 m
Continuous Drain Current ID -20 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID -20 A
Continuous Drain Current (Tc=100C) ID -13 A
Pulse Drain Current Tested IDM -80 A
Single Pulse Avalanche Energy EAS 169 mJ
Dissipation (Tc=25C) PD 30 W
Thermal Resistance Junction-to-Case RJC 4.2 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -30 V
Drain-Source Leakage Current IDSS VDS=-24V , VGS=0V , TJ=25 -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.5 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID=-10A 11 15 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-6A 17 22 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-15V , VGS=0V , f=1MHz 1915 pF
Output Capacitance Coss 300 pF
Reverse Transfer Capacitance Crss 210 pF
Total Gate Charge Qg VDS=-15V , VGS=-10V , ID=-5A 25 nC
Gate-Source Charge Qgs 5
Gate-Drain Charge Qg d 6
Switching Characteristics
Turn-On Delay Time Td(on) VDD=-15V, VGS=-10V ,RG=3, ID=-10A 9 nS
Rise Time Tr 11
Turn-Off Delay Time Td(off) 44
Fall Time Tf 21
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Maximum Body-Diode Continuous Current IS -20 A
Reverse recover time Trr IS=-2.8A, di/dt=100A/us, Tj=25 64 nS
Reverse recovery charge Qrr 25 nC
PDFN3X3-8L Package Information
Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.650 0.850 0.026 0.033
A1 0.152 REF. 0.006 REF.
A2 0~0.05 0~0.002
D 2.900 3.100 0.114 0.122
D1 2.300 2.600 0.091 0.102
E 2.900 3.100 0.114 0.122
E1 3.150 3.450 0.124 0.136
E2 1.535 1.935 0.060 0.076
b 0.200 0.400 0.008 0.016
e 0.550 0.750 0.022 0.030
L 0.300 0.500 0.012 0.020
L1 0.180 0.480 0.007 0.019
L2 0~0.100 0~0.004
L3 0~0.100 0~0.004
H 0.315 0.515 0.012 0.020
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2504101957_Siliup-SP30P11NJ_C41355018.pdf

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