150V N Channel MOSFET SP015N09GHNK by Siliup Semiconductor Technology for Power Management Solutions
Product Overview
The SP015N09GHNK is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications and DC-DC converters. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for demanding power management solutions.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015N09GHNK
- Technology: Advanced Split Gate Trench Technology
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 150 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 9.2 | m | ||
| ID | ID | 70 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 150 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 70 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 45 | A | ||
| Pulsed Drain Current | IDM | 280 | A | |||
| Single Pulse Avalanche Energy | EAS | 506 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 135 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.93 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 120V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 9.2 | 11.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 75V, VGS = 0V, f = 1.0MHz | - | 3310 | - | pF |
| Output Capacitance | Coss | - | 268 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 9 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=30A | - | 30 | - | nC |
| Gate-Source Charge | Qgs | - | 17.8 | - | ||
| Gate-Drain Charge | Qg d | - | 7 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, ID = 30A, RG = 6 | - | 13 | - | nS |
| Rise Time | tr | - | 25 | - | ||
| Turn-Off Delay Time | td(off) | - | 31 | - | ||
| Fall Time | tf | - | 25 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 70 | A | |
| Body Diode Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 76 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 175 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 3.910 | 4.110 | 0.154 | 0.162 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D2 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| 10 | 12 | 10 | 12 | |||
2504101957_Siliup-SP015N09GHNK_C22466807.pdf
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