150V N Channel MOSFET SP015N09GHNK by Siliup Semiconductor Technology for Power Management Solutions

Key Attributes
Model Number: SP015N09GHNK
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
70A
RDS(on):
9.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Output Capacitance(Coss):
268pF
Input Capacitance(Ciss):
3.31nF
Pd - Power Dissipation:
135W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SP015N09GHNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP015N09GHNK is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications and DC-DC converters. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for demanding power management solutions.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP015N09GHNK
  • Technology: Advanced Split Gate Trench Technology
  • Package: PDFN5X6-8L

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
V(BR)DSS V(BR)DSS 150 V
RDS(on)TYP RDS(on) @10V 9.2 m
ID ID 70 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) 150 V
Gate-Source Voltage VGS (Ta=25) 20 V
Continuous Drain Current ID (Tc=25) 70 A
Continuous Drain Current ID (Tc=100) 45 A
Pulsed Drain Current IDM 280 A
Single Pulse Avalanche Energy EAS 506 mJ
Power Dissipation PD (Tc=25) 135 W
Thermal Resistance Junction-to-Case RJC 0.93 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 150 - - V
Drain Cut-Off Current IDSS VDS = 120V, VGS = 0V - - 1 A
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 A
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 3.0 4.0 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 20A - 9.2 11.5 m
Dynamic Characteristics
Input Capacitance Ciss VDS = 75V, VGS = 0V, f = 1.0MHz - 3310 - pF
Output Capacitance Coss - 268 - pF
Reverse Transfer Capacitance Crss - 9 - pF
Total Gate Charge Qg VDS=75V , VGS=10V , ID=30A - 30 - nC
Gate-Source Charge Qgs - 17.8 -
Gate-Drain Charge Qg d - 7 -
Switching Characteristics
Turn-On Delay Time td(on) VGS = 10V, VDS = 50V, ID = 30A, RG = 6 - 13 - nS
Rise Time tr - 25 -
Turn-Off Delay Time td(off) - 31 -
Fall Time tf - 25 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 70 A
Body Diode Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 76 - nS
Body Diode Reverse Recovery Charge Qrr - 175 - nC
Package Information (PDFN5X6-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

2504101957_Siliup-SP015N09GHNK_C22466807.pdf

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