Complementary mosfet 30V device Siliup SP3022CP8 for battery protection and power management circuits
Key Attributes
Model Number:
SP3022CP8
Product Custom Attributes
Drain To Source Voltage:
30V;30V
Current - Continuous Drain(Id):
7A;8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@10V;24mΩ@4.5V;19mΩ@10V;25mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA;1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
51pF;142pF
Number:
-
Output Capacitance(Coss):
62pF;146pF
Input Capacitance(Ciss):
416pF;1.07nF
Pd - Power Dissipation:
1.8W
Gate Charge(Qg):
5nC@4.5V;21nC@10V
Mfr. Part #:
SP3022CP8
Package:
SOP-8
Product Description
Product Overview
The SP3022CP8 is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. This lead-free, surface mountable device is suitable for applications such as battery protection, load switching, and power management. It offers robust performance with 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP3022CP8
- Package: SOP-8L
- Certification: Lead free product is acquired
- Device Code: 3022C
Technical Specifications
General Summary
| Parameter | N-Channel (SP3022CP8) | P-Channel (SP3022CP8) |
|---|---|---|
| V(BR)DSS | 30V | -30V |
| RDS(on) TYP @ 10V | 18m | - |
| RDS(on) TYP @ 4.5V | 24m | 25m |
| ID @ 10V | 7A | - |
| ID @ 4.5V | - | -8A |
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
| Parameter | Symbol | N-Channel Value | P-Channel Value | Units |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | -30 | V |
| Gate-Source Voltage | VGS | 20 | 20 | V |
| Continuous Drain Current | ID | 7 | -8 | A |
| Pulsed Drain Current | IDM | 28 | -32 | A |
| Single Pulse Avalanche Energy1 | EAS | 10.5 | 30 | mJ |
| Power Dissipation | PD | 1.8 | W | |
| Thermal Resistance Junction-to-Ambient | RJA | 69.5 | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
N-Channel Electrical Characteristics (Ta=25, unless otherwise noted)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=8A | - | 18 | 28 | m |
| VGS=4.5V , ID=6A | - | 24 | 35 | m | ||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 416 | - | pF |
| Output Capacitance | Coss | - | - | 62 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 51 | - | pF |
| Total Gate Charge | Qg | VDS=20V , VGS=4.5V , ID=6A | - | 5 | - | nC |
| Gate-Source Charge | Qgs | - | - | 1.11 | - | - |
| Gate-Drain Charge | Qgd | - | - | 2.61 | - | - |
| Turn-On Delay Time | Td(on) | VDD=12V, VGS=10V , RG=3, ID=6A | - | 7.7 | - | nS |
| Rise Time | Tr | - | - | 46 | - | - |
| Turn-Off Delay Time | Td(off) | - | - | 11 | - | - |
| Fall Time | Tf | - | - | 3.6 | - | - |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 7 | - | A |
| Reverse Recovery Time | Trr | IS=10A, di/dt=100A/us, Tj=25 | - | 18 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 2 | - | nC |
P-Channel Electrical Characteristics (Ta=25, unless otherwise noted)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-8A | - | 19 | 28 | m |
| VGS=-4.5V , ID=-6A | - | 25 | 35 | m | ||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 1070 | - | pF |
| Output Capacitance | Coss | - | - | 146 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 142 | - | pF |
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-6A | - | 21 | - | nC |
| Gate-Source Charge | Qgs | - | - | 2.1 | - | - |
| Gate-Drain Charge | Qgd | - | - | 5.6 | - | - |
| Turn-On Delay Time | Td(on) | VDD=-15V VGS=-10V , RG=6, ID=-1A | - | 7 | - | nS |
| Rise Time | Tr | - | - | 9 | - | - |
| Turn-Off Delay Time | Td(off) | - | - | 30 | - | - |
| Fall Time | Tf | - | - | 18 | - | - |
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -8 | - | A |
| Reverse Recovery Time | Trr | IS=-20A, di/dt=-100A/us, Tj=25 | - | 50 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 31 | - | nC |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP3022CP8 | SOP-8L | 4000 |
SOP-8L Package Information
| Symbol | Dimensions In Millimeters | Min. | Max. |
|---|---|---|---|
| A | - | 1.35 | 1.75 |
| A1 | - | 0.10 | 0.25 |
| A2 | - | 1.35 | 1.55 |
| b | - | 0.33 | 0.51 |
| c | - | 0.17 | 0.25 |
| D | - | 4.80 | 5.00 |
| e | - | 1.27 REF. | - |
| E | - | 5.80 | 6.20 |
| E1 | - | 3.80 | 4.00 |
| L | - | 0.40 | 1.27 |
| - | 0 | 8 |
2504101957_Siliup-SP3022CP8_C22385408.pdf
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