High Voltage 80V MOSFET Siliup SP2807TQ with Low Gate Charge and Fast Switching Characteristics
Key Attributes
Model Number:
SP2807TQ
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
80A
RDS(on):
9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
126pF
Number:
1 N-channel
Output Capacitance(Coss):
620pF
Input Capacitance(Ciss):
3.26nF
Pd - Power Dissipation:
230W
Mfr. Part #:
SP2807TQ
Package:
TO-220-3L
Product Description
Product Overview
The SP2807TQ is an 80V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co., Ltd. It features fast switching, low gate charge, and low RDS(on) with a typical value of 9m at 10V. This MOSFET is 100% tested for single pulse avalanche energy and is ideal for DC-DC converters, high-frequency switching, and synchronous rectification applications. It comes in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co., Ltd.
- Device Code: 2807
- Package Type: TO-220-3L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | - | - | - | - | 80 | V |
| RDS(on)TYP | - | @10V | - | 9 | - | m |
| ID | - | - | - | - | 80 | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | - | - | 80 | V |
| Gate-Source Voltage | VGS | (Ta=25) | - | - | 25 | V |
| Continuous Drain Current | ID | (TC=25) | - | - | 80 | A |
| Continuous Drain Current | ID | (TC=100) | - | - | 53.3 | A |
| Pulsed Drain Current | IDM | - | - | - | 320 | A |
| Single Pulse Avalanche Energy | EAS | - | - | - | 1600 | mJ |
| Power Dissipation | PD | (TC=25) | - | - | 230 | W |
| Thermal Resistance Junction-to-Case | RJC | - | - | - | 0.54 | /W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 80 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=64V , VGS=0V , TJ=25 | - | - | 3 | uA |
| Gate-Source Leakage Current | IGSS | VGS=25V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 9 | 13 | m |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 3260 | - | pF |
| Output Capacitance | Coss | - | - | 620 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 126 | - | pF |
| Total Gate Charge | Qg | VDS=40V , VGS=10V , ID=80A | - | 176 | - | nC |
| Gate-Source Charge | Qgs | - | - | 23 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 52 | - | nC |
| Turn-On Delay Time | Td(on) | VDD=180V VGS=10V , RG=10, ID=20A | - | 28 | - | nS |
| Rise Time | Tr | - | - | 47 | - | nS |
| Turn-Off Delay Time | Td(off) | - | - | 57 | - | nS |
| Fall Time | Tf | - | - | 40 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 80 | A |
| Reverse Recovery Time | Trr | IS=43A, di/dt=100A/us, TJ=25 | - | 105 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 415 | - | nC |
| TO-220-3L Package Information (Dimensions in Millimeters) | |||
|---|---|---|---|
| Symbol | Min. | Max. | |
| A | 4.400 | 4.600 | |
| A1 | 2.250 | 2.550 | |
| b | 0.710 | 0.910 | |
| b1 | 1.170 | 1.370 | |
| c | 0.330 | 0.650 | |
| c1 | 1.200 | 1.400 | |
| D | 9.910 | 10.250 | |
| E | 8.950 | 9.750 | |
| E1 | 12.650 | 13.050 | |
| e | 2.540 (TYP.) | - | |
| e1 | 4.980 | 5.180 | |
| F | 2.650 | 2.950 | |
| H | 7.900 | 8.100 | |
| h | 0.000 | 0.300 | |
| L | 12.900 | 13.400 | |
| L1 | 2.850 | 3.250 | |
| V | 6.900 (REF.) | - | |
| 3.400 | 3.800 | ||
2506271732_Siliup-SP2807TQ_C49257256.pdf
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