Low On Resistance 40V P Channel MOSFET Siliup SP40P25NQ for Power Management and DC DC Converter Designs
Key Attributes
Model Number:
SP40P25NQ
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
7A
RDS(on):
50mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Number:
1 P-Channel
Reverse Transfer Capacitance (Crss@Vds):
134pF
Output Capacitance(Coss):
1.415nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
102nC@10V
Mfr. Part #:
SP40P25NQ
Package:
PDFN-6L(2x2)
Product Description
Product Overview
The SP40P25NQ is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features low on-resistance and low input capacitance, making it suitable for power management functions and DC-DC converters. This device is available in a PDFN2X2-6L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 40P25
- Package: PDFN2X2-6L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -40 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | -10V | 25 | 35 | m | |
| Static Drain-Source On-Resistance | RDS(on) | -4.5V | 35 | 50 | m | |
| Continuous Drain Current | ID | -7 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -7 | A | |||
| Pulsed Drain Current | IDM | -28 | A | |||
| Power Dissipation | PD | 2 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 62.5 | /W | |||
| Operating Junction Temperature Range | TSTG | -55 | +150 | |||
| Storage Temperature Range | TJ | -55 | +150 | |||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -40 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.2 | -1.5 | -2.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-10V, ID =-5A | 25 | 35 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-4A | 35 | 50 | m | |
| Input Capacitance | Ciss | VDS=-20V , VGS=0V , f=1MHz | 1415 | pF | ||
| Output Capacitance | Coss | 134 | pF | |||
| Reverse Transfer Capacitance | Crss | 102 | pF | |||
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-10A | 23.5 | nC | ||
| Gate-Source Charge | Qgs | 3.5 | ||||
| Gate-Drain Charge | Qg d | 3.3 | ||||
| Turn-On Delay Time | Td(on) | VDD=-15V VGS=-10V , RG=3, ID=-6A | 11 | nS | ||
| Rise Time | Tr | 15.7 | ||||
| Turn-Off Delay Time | Td(off) | 35 | ||||
| Fall Time | Tf | 5.5 | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information (PDFN2X2-6L) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Typ. | Max. | Unit | |
| A | 0.70 | 0.75 | 0.80 | |||
| A1 | 0.02 | 0.05 | ||||
| b | 0.25 | 0.30 | 0.35 | |||
| b1 | 0.20REF | |||||
| c | 0.203REF | |||||
| D | 1.90 | 2.00 | 2.10 | |||
| D1 | 0.08 | 0.125 | 0.18 | |||
| D2 | 0.85 | 0.90 | 0.95 | |||
| D3 | 0.25 | 0.30 | 0.35 | |||
| D4 | 0.33 | 0.375 | 0.43 | |||
| e | 0.65BSC | |||||
| Nd | 1.30BSC | |||||
| E | 1.90 | 2.00 | 2.10 | |||
| E2 | 0.95 | 1.00 | 1.05 | |||
| E3 | 0.55 | 0.60 | 0.65 | |||
| L | 0.20 | 0.25 | 0.30 | |||
| h | 0.25REF | |||||
2505291610_Siliup-SP40P25NQ_C48888440.pdf
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