High Voltage 900V N Channel MOSFET Siliup SP12N90TG with Fast Switching and Low Gate Charge Features
Key Attributes
Model Number:
SP12N90TG
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
700mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Number:
-
Reverse Transfer Capacitance (Crss@Vds):
5pF
Output Capacitance(Coss):
278pF
Input Capacitance(Ciss):
4.713nF
Pd - Power Dissipation:
230W
Gate Charge(Qg):
87nC@10V
Mfr. Part #:
SP12N90TG
Package:
TO-220F
Product Description
Product Overview
The SP12N90TG is a 900V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching and synchronous rectification, this MOSFET features fast switching speeds, low gate charge, and low RDS(on). It is ideal for DC-DC converter applications and is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP12N90TG
- Technology: N-Channel Planar MOSFET
- Package: TO-220F
- Marking: 12N90
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 900 | V | |||
| Gate-Source Voltage | VGS | ±30 | V | |||
| Continuous Drain Current (Tc=25) | ID | 12 | A | |||
| Continuous Drain Current (Tc=100) | ID | 8 | A | |||
| Pulsed Drain Current | IDM | 48 | A | |||
| Single Pulse Avalanche Energy | EAS | 1805 | mJ | |||
| Power Dissipation (Tc=25) | PD | 230 | W | |||
| Thermal Resistance Junction-to-Case | RθJC | 0.54 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250µA, VGS = 0V | 900 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 720V, VGS = 0V | - | - | 25 | µA |
| Gate Leakage Current | IGSS | VGS = ±30V, VDS = 0V | - | - | ±0.1 | µA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 6A | - | 0.7 | 0.9 | Ω |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 4713 | - | pF |
| Output Capacitance | Coss | - | 278 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 5 | - | pF | |
| Total Gate Charge | Qg | VDS=720V , VGS=10V , ID=12A | - | 87 | - | nC |
| Gate-Source Charge | Qgs | - | 27 | - | ||
| Gate-Drain Charge | Qgd | - | 31 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 450V, VDS = 25V, ID = 12A, RG = 25Ω | - | 52 | - | nS |
| Rise Time | tr | - | 59 | - | ||
| Turn-Off Delay Time | td(off) | - | 90 | - | ||
| Fall Time | tf | - | 48 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 12 | A | |
| Body Diode Reverse Recovery Time | Trr | IS=12A, di/dt=100A/us, TJ=25 | - | 945 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 13.5 | - | µC | |
| TO-220F Package Information (Dimensions in Millimeters) | ||
|---|---|---|
| Symbol | Min. | Max. |
| A | 4.300 | 4.700 |
| A1 | 1.300 | REF. |
| A2 | 2.800 | 3.200 |
| A3 | 2.500 | 2.900 |
| b | 0.500 | 0.750 |
| b1 | 1.100 | 1.350 |
| b2 | 1.500 | 1.750 |
| c | 0.500 | 0.750 |
| D | 9.960 | 10.360 |
| E | 14.800 | 15.200 |
| e | 2.540 TYP. | |
| F | 2.700 REF. | |
| Φ | 3.500 REF. | |
| h | 0.000 | 0.300 |
| h1 | 0.800 REF. | |
| h2 | 0.500 REF. | |
| L | 28.000 | 28.400 |
| L1 | 1.700 | 1.900 |
| L2 | 0.900 | 1.100 |
2504101957_Siliup-SP12N90TG_C42372391.pdf
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