High Frequency Power Switching MOSFET Siliup SP30P13P8 with Low RDSon and 30V Drain Source Voltage
Key Attributes
Model Number:
SP30P13P8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
11A
RDS(on):
13mΩ@10V;16mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
300pF
Number:
1 P-Channel
Output Capacitance(Coss):
350pF
Input Capacitance(Ciss):
1.6nF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SP30P13P8
Package:
SOP-8L
Product Description
Product Overview
The SP30P13P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching speeds, low gate charge, and low RDS(on). This device is suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supply systems. It has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP30P13P8
- Material: Silicon
- Package Type: SOP-8L
- Marking: 30P13
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| RDS(on) Typ. | @-10V | 13 | 16 | m | ||
| RDS(on) Typ. | @-4.5V | 16 | 21 | m | ||
| Continuous Drain Current | ID | -11 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -11 | A | |||
| Pulsed Drain Current | IDM | -44 | A | |||
| Single Pulse Avalanche Energy | EAS | 12.8 | mJ | |||
| Power Dissipation | PD | 3.1 | W | |||
| Junction-to-Ambient Thermal Resistance | RJA | 40 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-24V, VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-10A | - | 13 | 16 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-7A | - | 16 | 21 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | - | 1600 | - | pF |
| Output Capacitance | Coss | - | 350 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 300 | - | pF | |
| Total Gate Charge | Qg | VDS=-15V, VGS=-10V, ID=-10A | - | 30 | - | nC |
| Gate-Source Charge | Qgs | - | 5.5 | - | - | |
| Gate-Drain Charge | Qgd | - | 8 | - | - | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V,VGS=-10V,RG=3, ID=-10A | - | 10 | - | nS |
| Rise Time | Tr | - | 60 | - | - | |
| Turn-Off Delay Time | Td(off) | - | 52 | - | - | |
| Fall Time | Tf | - | 70 | - | - | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -11 | A | |
| Reverse Recovery Time | Trr | IS=-10A, di/dt=100A/us, TJ=25 | - | 35 | - | nS |
| Reverse Recovery Charge | Qrr | - | 11 | - | nC | |
| Package Information (SOP-8L) | ||||||
| Dimension | Symbol | Min. (mm) | Max. (mm) | |||
| Overall Height | A | 1.35 | 1.75 | |||
| Seating Plane Height | A1 | 0.10 | 0.25 | |||
| Mold Height | A2 | 1.35 | 1.55 | |||
| Lead Width | b | 0.33 | 0.51 | |||
| Lead Thickness | c | 0.17 | 0.25 | |||
| Package Length | D | 4.80 | 5.00 | |||
| Lead Pitch | e | 1.27 REF. | ||||
| Package Width | E | 5.80 | 6.20 | |||
| Body Width | E1 | 3.80 | 4.00 | |||
| Lead Length | L | 0.40 | 1.27 | |||
| Lead Angle | 0 | 8 | ||||
Note: 1. The EAS test condition is VDD=-15V, VGS=-10V, L=0.1mH, RG=25.
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP30P13P8 | SOP-8L | 4000 |
2504101957_Siliup-SP30P13P8_C41355024.pdf
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