1200V Silicon Carbide MOSFET Siliup SP23N120CTF Designed for Switch Mode Power Supplies and Inverters
Key Attributes
Model Number:
SP23N120CTF
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
23A
Operating Temperature -:
-55℃~+175℃
RDS(on):
69mΩ@18V
Gate Threshold Voltage (Vgs(th)):
3.3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Output Capacitance(Coss):
64pF
Input Capacitance(Ciss):
1.176nF
Pd - Power Dissipation:
197W
Gate Charge(Qg):
69nC
Mfr. Part #:
SP23N120CTF
Package:
TO-247
Product Description
Product Overview
The SP23N120CTF is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high-speed switching with low capacitances, high blocking voltage with low RDS(on), and is designed for easy paralleling and simple driving. It is RoHS compliant and suitable for a wide range of power electronics applications including Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters, UPS Power Supplies, Motor Drives, High Voltage DC/DC Converters, and Switching Mode Power Supplies. The MOSFET is supplied in a TO-247 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Material: Silicon Carbide (SiC)
- Package: TO-247
- Certification: RoHS Compliant
- Device Code: SP23N120CTF
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 1200 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @10V | 69 | m | ||
| Continuous Drain Current | ID | 23 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 1200 | V | ||
| Gate-Source Voltage | VGSMAX | (Ta=25) | -10 | +25 | V | |
| Recommended Gate-Source Voltage | VGSop | (Ta=25) | -5 | +20 | V | |
| Continuous Drain Current | ID | (Tc=25) | 32 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 23 | A | ||
| Pulsed Drain Current | IDM | (Ta=25) | 96 | A | ||
| Single Pulse Avalanche Energy | EAS | (Ta=25) | 420 | mJ | ||
| Power Dissipation | PD | (Tc=25) | 197 | W | ||
| Power Dissipation | PD | (Tc=100) | 104 | W | ||
| Thermal Resistance Junction-Case | RJC | (Tc=25) | 0.76 | /W | ||
| Storage Temperature Range | TSTG | -55 | 175 | |||
| Operating Junction Temperature Range | TJ | -55 | 175 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=100uA | 1200 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=1200V, VGS=0V, TJ=25 | - | 1 | 100 | uA |
| Gate-Source Leakage Current | IGSS | VGS=22V, VDS=0V, TJ=25 | - | 1 | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=5mA, TJ=25 | 2.0 | 3.3 | 4.0 | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=5mA, TJ=175 | - | 2.2 | - | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V, ID=20A, TJ=25 | - | 69 | 86 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V, ID=20A, TJ=175 | - | 105 | - | m |
| Input Capacitance | Ciss | VDS=1200V, VGS=0V, f=100KHz | - | 1176 | - | pF |
| Output Capacitance | Coss | VDS=1200V, VGS=0V, f=100KHz | - | 64 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=1200V, VGS=0V, f=100KHz | - | 7 | - | pF |
| Total Gate Charge | Qg | VDS=800V, VGS=-5/+18V, ID=20A | - | 69 | - | nC |
| Gate-Source Charge | Qgs | VDS=800V, VGS=-5/+18V, ID=20A | - | 13 | - | nC |
| Gate-Drain Charge | Qgd | VDS=800V, VGS=-5/+18V, ID=20A | - | 23 | - | nC |
| Turn-On Delay Time | td(on) | VDS=800V, VGS=-5/+18V, ID=20A, RG=2.5, L=250uH | - | 8 | - | ns |
| Rise Time | tr | VDS=800V, VGS=-5/+18V, ID=20A, RG=2.5, L=250uH | - | 23 | - | ns |
| Turn-Off Delay Time | td(off) | VDS=800V, VGS=-5/+18V, ID=20A, RG=2.5, L=250uH | - | 27 | - | ns |
| Fall Time | tf | VDS=800V, VGS=-5/+18V, ID=20A, RG=2.5, L=250uH | - | 8 | - | ns |
| Turn-On Energy | Eon | VDS=800V, VGS=-5/+18V, ID=20A, RG=2.5, L=250uH | - | 76 | - | J |
| Turn-Off Energy | Eoff | VDS=800V, VGS=-5/+18V, ID=20A, RG=2.5, L=250uH | - | 251 | - | J |
| Total Switching Loss | Etot | VDS=800V, VGS=-5/+18V, ID=20A, RG=2.5, L=250uH | - | 337 | - | J |
| Diode Forward Voltage | VSD | VGS=-5V, ISD=10A, TJ=25 | - | 4.6 | - | V |
| Diode Forward Voltage | VSD | VGS=-5V, ISD=10A, TJ=175 | - | 4.1 | - | V |
| Reverse Recovery Time | trr | VGS=-5V, ISD=20A, VR=800V, RG=2.5, TJ=175 | - | 21 | - | ns |
| Reverse Recovery Charge | Qrr | VGS=-5V, ISD=20A, VR=800V, RG=2.5, TJ=175 | - | 299 | - | nC |
| Peak Reverse Recovery Current | Irrm | VGS=-5V, ISD=20A, VR=800V, RG=2.5, TJ=175 | - | 21 | - | A |
| Maximum Body-Diode Continuous Current | IS | VGS=-4V, TJ=25 | - | - | 32 | A |
| Package Information | ||||||
| Package Type | TO-247 | |||||
| Pin Configuration | 1:G 2:D 3:S | |||||
| TO-247 Package Dimensions | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.850 | 5.150 | 0.191 | 0.200 | ||
| A1 | 2.200 | 2.600 | 0.087 | 0.102 | ||
| b2 | 1.800 | 2.200 | 0.071 | 0.087 | ||
| b | 1.000 | 1.400 | 0.039 | 0.055 | ||
| b1 | 2.800 | 3.200 | 0.110 | 0.126 | ||
| c | 0.500 | 0.700 | 0.020 | 0.028 | ||
| c1 | 1.900 | 2.100 | 0.075 | 0.083 | ||
| D | 15.450 | 15.750 | 0.608 | 0.620 | ||
| E1 | 3.500 REF. | 0.138 REF. | ||||
| E2 | 3.600 REF. | 0.142 REF. | ||||
| L | 40.900 | 41.300 | 1.610 | 1.626 | ||
| L1 | 24.800 | 25.100 | 0.976 | 0.988 | ||
| L2 | 20.300 | 20.600 | 0.799 | 0.811 | ||
| 7.100 | 7.300 | 0.280 | 0.287 | |||
| e | 5.450 TYP. | 0.215 TYP. | ||||
| H1 | 5.980 REF. | 0.235 REF. | ||||
| h | 0.000 | 0.300 | 0.000 | 0.012 | ||
2504101957_Siliup-SP23N120CTF_C45351243.pdf
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