Sichainsemi S1M075120J2 Silicon Carbide Power MOSFET 1200V 39A Ideal for EV Battery Charging Systems
Key Attributes
Model Number:
S1M075120J2
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
39A
RDS(on):
75mΩ@15V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.3pF
Pd - Power Dissipation:
169W
Input Capacitance(Ciss):
1.02nF
Gate Charge(Qg):
40nC
Mfr. Part #:
S1M075120J2
Package:
TO-263-7L
Product Description
Product Overview
The S1M075120J2 is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt. Key benefits include reduced cooling requirements, improved efficiency, increased power density, and the ability to operate at higher system switching frequencies. This MOSFET is ideal for on-board chargers, EV battery chargers, booster/DC-DC converters, and switch mode power supplies.
Product Attributes
- Brand: (Sichain Semiconductor)
- Material: Silicon Carbide (SiC)
- Certifications: Halogen free, RoHS compliant
- Package Type: TO-263-7L
Technical Specifications
| Type | VDS (V) | IDS (A) (TC = 25) | RDS(ON), typ (m) (VGS = 15V, ID = 20A, TJ = 25) | Tj,max () | Marking | Package |
|---|---|---|---|---|---|---|
| S1M075120J2 | 1200 | 39 | 75 | 175 | S1M075120J2 | TO263-7L |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VDS,max | Drain source voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS,max | Gate source voltage | -8 /+22 | V | Absolute maximum values | Note1 |
| VGSop | Gate source voltage | -4 /+15 | V | Recommended operational values | |
| ID | Continuous drain current | 39 | A | VGS = 15V, TC = 25C | Fig.19 |
| ID | Continuous drain current | 28 | A | VGS = 15V, TC = 100C | |
| ID(pulse) | Pulsed drain current | 87 | A | Pulse width tP limited by Tj,max | Fig.22 |
| PD | Power dissipation | 169 | W | TC= 25C,TJ = 175C | Fig.20 |
| TJ ,Tstg | Operating Junction and storage temperature | -55 to +175 | C | ||
| TL | Soldering temperature | 260 | C | 1.6mm (0.063) from case for 10s | |
| Rth(j-c) | Thermal resistance from junction to case | 0.89 | C/W | Fig.21 | |
| Rth(j-a) | Thermal resistance from junction to ambient | 35 | Not subject to production test. Parameter verified by design/characterization. | 1 | |
| V(BR)DSS | Drain-source breakdown voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS(th) | Gate threshold voltage | 2.3 | V | VDS = VGS, ID = 5mA | Fig.11 |
| VGS(th) | Gate threshold voltage | 2.8 | V | VDS = VGS, ID = 5mA, TJ = 175C | |
| VGS(th) | Gate threshold voltage | 3.6 | V | VDS = VGS, ID = 5mA | |
| IDSS | Zero gate voltage drain current | 1 | A | VDS = 1200V, VGS = 0V | |
| IGSS | Gate source leakage current | 100 | nA | VGS = 15V, VDS = 0V | |
| RDS(on) | Current drain-source on-state resistance | 75 | m | VGS = 15V, ID = 20A | Fig.4,5 ,6 |
| RDS(on) | Current drain-source on-state resistance | 90 | m | VGS = 15V, ID = 20A, TJ = 175C | |
| gfs | Transconductance | 9.7 | S | VDS = 20V, ID = 20A | Fig.7 |
| gfs | Transconductance | 9.9 | S | VDS = 20V, ID = 20A, TJ = 175C | |
| Rg,int | Internal gate resistance | 1.5 | VAC = 25mV, f = 1MHz | ||
| VSD | Diode forward voltage | 3.8 | V | VGS = -4V, ISD = 10A | Fig.8,9, 10 |
| VSD | Diode forward voltage | 3.5 | V | VGS = -4V, ISD = 10A TJ = 175C | |
| Ciss | Input capacitance | 1020 | pF | VDS = 1000V, VGS = 0V TJ = 25C, VAC = 25mV f = 1MHz | Fig.17,18 |
| Coss | Output capacitance | 64 | |||
| Crss | Reverse capacitance | 4.3 | |||
| Eoss | Coss stored energy | 39 | J | Fig.16 | |
| Qgs | Gate source charge | 8.9 | nC | VDS = 800V, VGS = -4/+15V ID = 20A | Fig.12 |
| Qgd | Gate drain charge | 25 | |||
| Qg | Gate charge | 40 | |||
| Eon | Turn on switching energy | 110 | J | VDD = 800V, VGS = -4/+15V ID = 20A, Rg = 0 L = 120uH | Fig.24 |
| Eoff | Turn off switching energy | 23 | |||
| tdon | Turn on delay time | 9.6 | ns | Fig.27 | |
| tr | Rise time | 7.8 | |||
| tdoff | Turn off delay time | 14.8 | |||
| tf | Fall time | 7.5 | |||
| VSD | Diode forward voltage | 3.8 | V | VGS = -4V, ISD = 10A | Fig.8,9, 10 |
| VSD | Diode forward voltage | 3.5 | V | VGS = -4V, ISD = 10A TJ = 175C | |
| IS | Continuous diode forward current | 36 | A | VGS = -4V, Tc = 25C | Note1 |
| trr | Reverse recovery time | 57 | nS | VR = 800V, VGS = -4V ID = 20A di/dt = 1100A/S TJ = 150C | |
| Qrr | Reverse recovery charge | 162 | nC | ||
| Irrm | Peak reverse recovery current | 5.9 | A |
2410121937_Sichainsemi-S1M075120J2_C22363611.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
