N Channel MOSFET Siliup SP010N14HTQ Featuring Fast Switching and Low Gate Charge for Power Management
Key Attributes
Model Number:
SP010N14HTQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
14mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
247pF
Number:
1 N-channel
Output Capacitance(Coss):
326pF
Pd - Power Dissipation:
142W
Input Capacitance(Ciss):
4.726nF
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
SP010N14HTQ
Package:
TO-220
Product Description
Product Overview
The SP010N14HTQ is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This MOSFET features fast switching, low gate charge, and low Rdson, making it suitable for power switching applications, DC-DC converters, and power management systems. It is designed for high efficiency and performance in demanding electronic circuits.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N14HTQ
- Channel Type: N-Channel
- Package: TO-220-3L
- Marking: 010N14H
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| On-Resistance | RDS(on)TYP | @10V | 14 | m | ||
| Continuous Drain Current | ID | 70 | A | |||
| Features | ||||||
| Fast Switching | ||||||
| Low Gate Charge and Rdson | ||||||
| 100% Single Pulse avalanche energy Test | ||||||
| Applications | ||||||
| Power switching application | ||||||
| DC-DC Converter | ||||||
| Power Management | ||||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (Tc=25) | 70 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 47 | A | ||
| Pulsed Drain Current | IDM | 280 | A | |||
| Single Pulse Avalanche Energy | EAS | 380 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 142 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.88 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 14 | 18 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 4726 | - | pF |
| Output Capacitance | Coss | - | 326 | - | ||
| Reverse Transfer Capacitance | Crss | - | 247 | - | ||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=10A | - | 75 | - | nC |
| Gate-Source Charge | Qgs | - | 15.5 | - | ||
| Gate-Drain Charge | Qg d | - | 20.3 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V,VGS=10V,RG=6,ID=10A | - | 15 | - | nS |
| Rise Time | tr | - | 11 | - | ||
| Turn-Off Delay Time | td(off) | - | 57 | - | ||
| Fall Time | tf | - | 15 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 70 | A | |
| Reverse Recovery Time | Trr | IS=30A, di/dt=100A/us, TJ=25 | - | 35 | - | nS |
| Reverse Recovery Charge | Qrr | - | 62 | - | nC | |
Package Information
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 |
2504101957_Siliup-SP010N14HTQ_C42372334.pdf
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