Low RDSon 500V N Channel Planar MOSFET Siliup SP20N50TQ for High Frequency Switching Applications
Product Overview
The SP20N50TQ is a 500V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, it features fast switching speeds, low gate charge, and low RDS(on). This MOSFET is ideal for DC-DC converters and synchronous rectification, offering 100% single pulse avalanche energy testing for enhanced reliability. It comes in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 20N50
- Package: TO-220-3L (1:G 2:D 3:S)
- Technology: N-Channel Planar MOSFET
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 500 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 0.28 | |||
| Continuous Drain Current | ID | 20 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 500 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 30 | V | ||
| Continuous Drain Current (TC=25) | ID | (Ta=25, unless otherwise noted) | 20 | A | ||
| Continuous Drain Current (TC=100) | ID | (Ta=25, unless otherwise noted) | 13.3 | A | ||
| Pulsed Drain Current | IDM | (Ta=25, unless otherwise noted) | 80 | A | ||
| Single Pulse Avalanche Energy | EAS | (Ta=25, unless otherwise noted) | 1620 | mJ | ||
| Power Dissipation (TC=25) | PD | (Ta=25, unless otherwise noted) | 230 | W | ||
| Thermal Resistance Junction-to-Case | RJC | (Ta=25, unless otherwise noted) | 0.54 | /W | ||
| Storage Temperature Range | TSTG | (Ta=25, unless otherwise noted) | -55 | 150 | ||
| Operating Junction Temperature Range | TJ | (Ta=25, unless otherwise noted) | -55 | 150 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 500 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=400V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=30V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=9A | - | 0.28 | 0.35 | |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 2825 | - | pF |
| Output Capacitance | Coss | VDS=25V , VGS=0V , f=1MHz | - | 280 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V , VGS=0V , f=1MHz | - | 30 | - | pF |
| Total Gate Charge | Qg | VDS=250V , VGS=10V , ID=20A | - | 65 | - | nC |
| Gate-Source Charge | Qgs | VDS=250V , VGS=10V , ID=20A | - | 13 | - | nC |
| Gate-Drain Charge | Qgd | VDS=250V , VGS=10V , ID=20A | - | 24 | - | nC |
| Turn-On Delay Time | Td(on) | VDD=250V VGS=10V , RG=10, ID=20A | - | 35 | - | nS |
| Rise Time | Tr | VDD=250V VGS=10V , RG=10, ID=20A | - | 70 | - | nS |
| Turn-Off Delay Time | Td(off) | VDD=250V VGS=10V , RG=10, ID=20A | - | 180 | - | nS |
| Fall Time | Tf | VDD=250V VGS=10V , RG=10, ID=20A | - | 85 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 20 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 390 | - | nS |
| Reverse Recovery Charge | Qrr | IS=20A, di/dt=100A/us, TJ=25 | - | 3450 | - | nC |
Package Information (TO-220-3L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 |
2504101957_Siliup-SP20N50TQ_C42372383.pdf
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