Low RDSon 500V N Channel Planar MOSFET Siliup SP20N50TQ for High Frequency Switching Applications

Key Attributes
Model Number: SP20N50TQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
350mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Output Capacitance(Coss):
220pF
Pd - Power Dissipation:
190W
Input Capacitance(Ciss):
2.62nF
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
SP20N50TQ
Package:
TO-220-3L-C
Product Description

Product Overview

The SP20N50TQ is a 500V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, it features fast switching speeds, low gate charge, and low RDS(on). This MOSFET is ideal for DC-DC converters and synchronous rectification, offering 100% single pulse avalanche energy testing for enhanced reliability. It comes in a TO-220-3L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 20N50
  • Package: TO-220-3L (1:G 2:D 3:S)
  • Technology: N-Channel Planar MOSFET

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 500 V
RDS(on)TYP RDS(on) @10V 0.28
Continuous Drain Current ID 20 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25, unless otherwise noted) 500 V
Gate-Source Voltage VGS (Ta=25, unless otherwise noted) 30 V
Continuous Drain Current (TC=25) ID (Ta=25, unless otherwise noted) 20 A
Continuous Drain Current (TC=100) ID (Ta=25, unless otherwise noted) 13.3 A
Pulsed Drain Current IDM (Ta=25, unless otherwise noted) 80 A
Single Pulse Avalanche Energy EAS (Ta=25, unless otherwise noted) 1620 mJ
Power Dissipation (TC=25) PD (Ta=25, unless otherwise noted) 230 W
Thermal Resistance Junction-to-Case RJC (Ta=25, unless otherwise noted) 0.54 /W
Storage Temperature Range TSTG (Ta=25, unless otherwise noted) -55 150
Operating Junction Temperature Range TJ (Ta=25, unless otherwise noted) -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 500 - - V
Drain-Source Leakage Current IDSS VDS=400V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=30V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 2 3 4 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=9A - 0.28 0.35
Input Capacitance Ciss VDS=25V , VGS=0V , f=1MHz - 2825 - pF
Output Capacitance Coss VDS=25V , VGS=0V , f=1MHz - 280 - pF
Reverse Transfer Capacitance Crss VDS=25V , VGS=0V , f=1MHz - 30 - pF
Total Gate Charge Qg VDS=250V , VGS=10V , ID=20A - 65 - nC
Gate-Source Charge Qgs VDS=250V , VGS=10V , ID=20A - 13 - nC
Gate-Drain Charge Qgd VDS=250V , VGS=10V , ID=20A - 24 - nC
Turn-On Delay Time Td(on) VDD=250V VGS=10V , RG=10, ID=20A - 35 - nS
Rise Time Tr VDD=250V VGS=10V , RG=10, ID=20A - 70 - nS
Turn-Off Delay Time Td(off) VDD=250V VGS=10V , RG=10, ID=20A - 180 - nS
Fall Time Tf VDD=250V VGS=10V , RG=10, ID=20A - 85 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 20 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 390 - nS
Reverse Recovery Charge Qrr IS=20A, di/dt=100A/us, TJ=25 - 3450 - nC

Package Information (TO-220-3L)

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.950 9.750 0.352 0.384
E1 12.650 13.050 0.498 0.514
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 6.900 REF. 0.276 REF.
3.400 3.800 0.134 0.150

2504101957_Siliup-SP20N50TQ_C42372383.pdf

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