High Speed Switching 1200V 240A SiC MOSFET Module Sichainsemi S1P05R120HBB Suitable for UPS Systems
Key Attributes
Model Number:
S1P05R120HBB
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
240A
Operating Temperature -:
-40℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
0.06pF
Input Capacitance(Ciss):
16.2pF
Gate Charge(Qg):
576nC
Mfr. Part #:
S1P05R120HBB
Package:
Through Hole,62.8x56.8mm
Product Description
Product Overview
The S1P05R120HBB is a 1200V / 240A All-Silicon Carbide (SiC) MOSFET Half-Bridge Module from Qingchun Semiconductor (Ningbo) Co., Ltd. This module is designed for high-speed switching, high power density, and high-frequency operation, offering ultra-low losses. It is suitable for a wide range of applications including servo drives, UPS systems, motor drives, high power converters, photovoltaic systems, wind power generation, and induction heating equipment.
Product Attributes
- Brand: Qingchun Semiconductor (Ningbo) Co., Ltd.
- Product Series: S1P05R120HBB
- Material: All-Silicon Carbide (SiC)
- Version: V01_00 (Preliminary)
- Compliance: RoHS, REACH
Technical Specifications
| Specification | Parameter | Value | Unit | Test Conditions / Notes |
|---|---|---|---|---|
| Maximum Ratings | Drain source voltage (VDS,max) | 1200 | V | VGS = 0V, ID = 600 A |
| Gate source voltage (VGS,max) | -8 / +22 | V | Absolute maximum values | |
| Gate source voltage (VGSop) | -4 / +18 | V | Recommended operational values | |
| Continuous drain current (ID nom) | 240 | A | VGS = 18V, TC = 100C | |
| Pulsed drain current (ID(pulse)) | 480 | A | Pulse width tp limited by Tj,max | |
| Operating Junction and storage temperature (TJ ,Tstg) | -40 to +175 | C | ||
| Mounting Torque (Ms) | 2.0 | Nm | ||
| Packaging Characteristics | High-side Resistance (RHS) | 4.5 | m | |
| Low-side Resistance (RLS) | 4.5 | m | ||
| Stray inductance (Ls) | 7.5 | nH | ||
| Isolation Test Voltage (VISO) | 3 | kV | RMS, f=50Hz, t=1min | |
| Creepage Distance (Terminal to Heatsink) | 12.0 | mm | ||
| Creepage Distance (Terminal to Terminal) | 6.5 | mm | ||
| Clearance (Terminal to Heatsink) | 10.0 | mm | ||
| Clearance (Terminal to Terminal) | 5.0 | mm | ||
| Maximum Junction Temperature (Tjmax) | 175 | C | ||
| Weight (W) | 40 | g | ||
| Electrical Characteristics | Drain-source breakdown voltage (V(BR)DSS) | 1200 | V | VGS = 0V, ID = 600A |
| Gate threshold voltage (VGS(th)) | 2.3 - 4.0 | V | VDS = VGS, ID = 69mA | |
| Zero gate voltage drain current (IDSS) | - 60 | A | VDS = 1200V, VGS = 0V | |
| Gate source leakage current (IGSS) | - 600 | nA | VGS = 15V, VDS = 0V | |
| Drain-source on-state resistance (RDS(on)) | 5.3 - 7 | m | VGS = 15V, ID = 240A | |
| Drain-source on-state resistance (RDS(on)) | 4.5 - 6 | m | VGS = 18V, ID = 240A | |
| Transconductance (gfs) | 160 | S | VDS = 20V, ID = 240A | |
| Input capacitance (Ciss) | 16.2 | pF | VDS = 1000V, VGS = 0V | |
| Output capacitance (Coss) | 0.86 | nF | VDS = 1000V, VGS = 0V | |
| Reverse capacitance (Crss) | 0.06 | VDS = 1000V, VGS = 0V | ||
| Gate charge (Qg) | 576 | nC | VDS = 800V, VGS = -4/+18V, ID = 200A | |
| Body Diode Characteristics | Diode forward voltage (VSD) | 3.8 | V | VGS = -4V, ISD = 120A |
| Diode forward voltage (VSD) | 3.6 | V | VGS = -4V, ISD = 120A, TJ = 175C | |
| Continuous diode forward current (IS) | 90 | A | VGS = -4V, Tc = 25C | |
| Reverse recovery time (trr) | 55 | ns | VR = 800V, VGS = -4V, ID = 240A, di/dt=3000A/s, TJ = 175C | |
| Reverse recovery charge (Qrr) | 4500 | nC | VR = 800V, VGS = -4V, ID = 240A, di/dt=3000A/s, TJ = 175C | |
| NTC-Thermistor Characteristics | Rate Resistance (R25) | 5 | k | Tc=25 |
| Deviation of R100 (R/R) | -5 to 5 | % | Tc=100, R100=489 | |
| B-value (B25/50) | 3380 - 3414 | K | R2=R25exp[B25/50 (1/T2-1/T1)] |
Note: All specifications are preliminary and subject to change.
2411261513_Sichainsemi-S1P05R120HBB_C37636038.pdf
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