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quality 20V P Channel MOSFET Low RDS on Siliup SP2004KNCT for Power Switching and Portable Electronics factory
quality 20V P Channel MOSFET Low RDS on Siliup SP2004KNCT for Power Switching and Portable Electronics factory

20V P Channel MOSFET Low RDS on Siliup SP2004KNCT for Power Switching and Portable Electronics

Key Attributes
Model Number: SP2004KNCT
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
RDS(on):
700mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF@16V
Number:
-
Input Capacitance(Ciss):
113pF@16V
Pd - Power Dissipation:
150mW
Mfr. Part #:
SP2004KNCT
Package:
PDFN1006-3B
Product Description

Product Overview

The SP2004KNCT is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for surface mount applications. It features low RDS(on) and operates at low logic level gate drive, making it suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. The device is ESD protected to 2kV.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP2004KNCT
  • Channel Type: P-Channel
  • Package: DFN1006-3B
  • Marking: 04K

Technical Specifications

Parameter Symbol Condition Value Unit
Product Summary
Drain-Source Voltage V(BR)DSS -20 V
Drain-Source On-Resistance (Max) RDS(on)MAX @ -4.5V 520 m
Drain-Source On-Resistance (Max) RDS(on)MAX @ -2.5V 700 m
Continuous Drain Current ID -0.66 A
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS 10 V
Continuous Drain Current ID -0.66 A
Pulsed Drain Current IDM -1.2 A
Power Dissipation PD 0.15 W
Thermal Resistance Junction to Ambient RJA 833 /W
Junction Temperature TJ 150
Storage Temperature TSTG -55~ +150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -20 V
Zero gate voltage drain current IDSS VDS =-16V,VGS = 0V -1 A
Gate-body leakage current IGSS VGS = 10VVDS =0V 10 A
Gate threshold voltage VGS(th) VDS =VGS, ID =-250A -0.35 to -1 V
Drain-source on-resistance RDS(on) VGS = -4.5V, ID = -0.5A 0.52
Drain-source on-resistance RDS(on) VGS = -2.5V, ID = -0.2A 0.7
Drain-source on-resistance RDS(on) VGS = -1.8V, ID = -0.1A 0.95
Input Capacitance Ciss VDS =-16V,VGS =0V,f =1MHz 113 pF
Output Capacitance Coss VDS =-16V,VGS =0V,f =1MHz 15 pF
Reverse Transfer Capacitance Crss VDS =-16V,VGS =0V,f =1MHz 9 pF
Turn-on delay time td(on) VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 9 ns
Turn-on rise time tr VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 5.7 ns
Turn-off delay time td(off) VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 32.6 ns
Turn-off fall time tf VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 20.3 ns
Diode Forward voltage VSD VGS =0V, IS=-0.5 A -1.2 V
Package Information
Package Type DFN1006-3B
Symbol Dimensions (mm) Min. Dimensions (mm) Max.
A 0.36 0.40
A1 0 0.05
b 0.45 0.55
b1 0.1 0.2
c 0.08 0.18
D 0.95 1.05
D1 0.65
E 0.55 0.65
E1 0.325
L 0.2 0.3
L1 0.2 0.3
R 0.05 0.15

2411220031_Siliup-SP2004KNCT_C41355134.pdf

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