Power switching MOSFET Siliup SP60P11TQ 60V P Channel with low gate charge and fast switching speeds
Key Attributes
Model Number:
SP60P11TQ
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
90A
RDS(on):
11mΩ@10V;14mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
364pF
Number:
1 P-Channel
Output Capacitance(Coss):
489pF
Input Capacitance(Ciss):
7.7nF
Pd - Power Dissipation:
160W
Gate Charge(Qg):
85.5nC@10V
Mfr. Part #:
SP60P11TQ
Package:
TO-220-3L-C
Product Description
Product Overview
The SP60P11TQ is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for power switching applications, this MOSFET offers fast switching speeds, low gate charge, and low RDS(on). Its key features include 100% single pulse avalanche energy testing, making it suitable for demanding applications such as DC-DC converters and power management systems. The device is available in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60P11TQ
- Package: TO-220-3L (1:G 2:D 3:S)
- Marking: 60P11
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| RDS(on) | @10V | 11 | m | |||
| RDS(on) | @4.5V | 14 | m | |||
| Continuous Drain Current | ID | (Tc=25) | -90 | A | ||
| Continuous Drain Current | ID | (Tc=100) | -60 | A | ||
| Pulsed Drain Current | IDM | -360 | A | |||
| Single Pulse Avalanche Energy | EAS | 420 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 160 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.78 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | V | ||
| Drain Cut-Off Current | IDSS | VDS=-48V , VGS=0V , TJ=25 | -1 | A | ||
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-20A | 11 | 15 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-20A | 14 | 18.5 | m | |
| Input Capacitance | Ciss | VDS=-30V,VGS=0V,f=1MHz | 7700 | pF | ||
| Output Capacitance | Coss | 489 | pF | |||
| Reverse Transfer Capacitance | Crss | 364 | pF | |||
| Total Gate Charge | Qg | VDS=-30V,VGS=-10V,ID=-20A | 85.5 | nC | ||
| Gate-Source Charge | Qgs | 12.1 | ||||
| Gate-Drain Charge | Qg d | 23.2 | nC | |||
| Turn-On Delay Time | td(on) | VDD=-30V,VGS=-10V,RG=3,ID=-30A | 9.8 | nS | ||
| Rise Time | tr | 6.1 | ||||
| Turn-Off Delay Time | td(off) | 44 | ||||
| Fall Time | tf | 12.7 | ||||
| Source-Drain Diode Forward Voltage | VSD | IS = -1A, VGS = 0V | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -90 | A | |||
| Reverse Recovery Time | Trr | IS=-20A,di/dt=100A/us,TJ=25 | 50 | nS | ||
| Reverse Recovery Charge | Qrr | 69 | nC |
Note: 1. The test condition is VDD=-30V,VGS=-10V,L=0.5mH,RG=25
2504101957_Siliup-SP60P11TQ_C41355206.pdf
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