Power Switching 60V Dual N Channel MOSFET Siliup SP6005DP8 with Low Gate Charge and Fast Switching
Key Attributes
Model Number:
SP6005DP8
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5A
RDS(on):
32mΩ@10V;38mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
2 N-Channel
Output Capacitance(Coss):
60pF
Input Capacitance(Ciss):
590pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
SP6005DP8
Package:
SOP-8L
Product Description
Product Overview
The SP6005DP8 is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rds(on), making it suitable for power switching applications, hard switched and high-frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP6005DP8
- Package: SOP-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| Rds(on) Typ | RDS(on)TYP | @10V | 32 | m | ||
| Rds(on) Typ | RDS(on)TYP | @4.5V | 38 | m | ||
| Continuous Drain Current | ID | 5 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 5 | A | |||
| Pulsed Drain Current | IDM | 20 | A | |||
| Power Dissipation | PD | 2 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 62.5 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=5A | - | 32 | 42 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=3A | - | 38 | 50 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=30V , VGS=0V , f=1MHz | - | 590 | - | pF |
| Output Capacitance | Coss | - | 60 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 25 | - | pF | |
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=4.5A | - | 14 | - | nC |
| Gate-Source Charge | Qgs | - | 2.9 | - | nC | |
| Gate-Drain Charge | Qg d | - | 5.2 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=30V ,VGS=10V , RG=3, ID=2A | - | 5 | - | nS |
| Rise Time | Tr | - | 2.6 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 16.1 | - | nS | |
| Fall Time | Tf | - | 2.3 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 5 | A | |
| Reverse Recovery Time | Trr | IS=5A, di/dt=100A/us, TJ=25 | - | 24 | - | nS |
| Reverse Recovery Charge | Qrr | - | 22 | - | nC | |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | (REF.) | 1.27 | ||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| (0) | 8 | |||||
2504101957_Siliup-SP6005DP8_C41355073.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
