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quality General Purpose Transistor Siliup MMBT3906T2 PNP Silicon Type Featuring SOT23 Package for Switching factory
quality General Purpose Transistor Siliup MMBT3906T2 PNP Silicon Type Featuring SOT23 Package for Switching factory

General Purpose Transistor Siliup MMBT3906T2 PNP Silicon Type Featuring SOT23 Package for Switching

Key Attributes
Model Number: MMBT3906T2
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
300@10mA,1V
Type:
-
Transition Frequency(fT):
150MHz
Vce Saturation(VCE(sat)):
300mV@100mA,5mA
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
MMBT3906T2
Package:
SOT-23
Product Description

Product Overview

The MMBT3906T2 is a general-purpose PNP silicon transistor designed for switching applications. It offers a collector-emitter voltage of -45V and a collector current of -0.2A. This transistor is supplied in a SOT-23 package.

Product Attributes

  • Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
  • Product Type: General Purpose Transistor
  • Material: Silicon
  • Polarity: PNP
  • Package: SOT-23
  • Model Marking: MMBT3906T2

Technical Specifications

Parameter Symbol Test Condition Min Max Unit
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Collector Base Voltage VCBO -50 V
Collector Emitter Voltage VCEO -45 V
Emitter Base Voltage VEBO -5 V
Collector Current IC -200 mA
Power Dissipation Ptot 200 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 +150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Collector-base breakdown voltage BVCBO IC=-100A ,IE=0 -50 V
Collector-emitter breakdown voltage BVCEO IC=-100A , IB=0 -45 V
Emitter-base breakdown voltage BVEBO IE=-100A,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V, IE=0 -100 nA
Collector cut-off current ICEO VCE=-45V, IB=0 -100 nA
Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA
DC current gain hFE VCE=-1V, IC=-10mA 100 300
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-5mA -0.3 V
Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-5mA -1.1 V
Transition frequency fT VCE= -5V, IC=-10mA,f=30MHz 150 MHZ
SOT-23 Package Dimensions
Symbol Dimensions In Millimeters Min. Max.
A 0.90 1.15
A1 0.00 0.10
A2 0.90 1.05
b 0.30 0.50
c 0.08 0.15
D 2.80 3.00
E 1.20 1.40
E1 2.25 2.55
e 0.95 REF.
e1 1.80 2.00
L 0.55 REF.
L1 0.30 0.50
0 8

2411212332_Siliup-MMBT3906T2_C41355099.pdf

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