Siliup SP30P16NJ 30V P Channel MOSFET offering fast switching speed and low on resistance for power control
Key Attributes
Model Number:
SP30P16NJ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
RDS(on):
16mΩ@10V;20mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF
Number:
1 P-Channel
Output Capacitance(Coss):
250pF
Input Capacitance(Ciss):
1.36nF
Pd - Power Dissipation:
22W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SP30P16NJ
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The SP30P16NJ is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low on-resistance, and 100% single pulse avalanche energy testing. This MOSFET is designed for applications such as DC-DC converters and power management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30P16NJ
- Device Code: 30P16
- Package: PDFN3X3-8L
- Material: Silicon
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| RDS(on) | -10V | 16 | m | |||
| RDS(on) | -4.5V | 20 | m | |||
| Continuous Drain Current | ID | -12 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | -12 | A | |||
| Continuous Drain Current (Tc=100C) | ID | -8 | A | |||
| Pulse Drain Current Tested | IDM | -48 | A | |||
| Single Pulse Avalanche Energy | EAS | 42 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 22 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 5.7 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-9A | 16 | 22 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-6A | 20 | 30 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 1360 | pF | ||
| Output Capacitance | Coss | 250 | pF | |||
| Reverse Transfer Capacitance | Crss | 200 | pF | |||
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-10A | 30 | nC | ||
| Gate-Source Charge | Qgs | 3.5 | nC | |||
| Gate-Drain Charge | Qg d | 9.2 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-30V, VGS=-10V ,RG=2.5, ID=-9A | 9 | nS | ||
| Rise Time | Tr | 11 | nS | |||
| Turn-Off Delay Time | Td(off) | 23 | nS | |||
| Fall Time | Tf | 10 | nS | |||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -12 | A | |||
| Reverse recover time | Trr | IS=-10A, di/dt=100A/us, Tj=25 | 23 | nS | ||
| Reverse recovery charge | Qrr | 15 | nC | |||
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 - 0.850 | 0.026 - 0.033 | ||||
| A1 | 0.152 REF. | 0.006 REF. | ||||
| A2 | 0~0.05 | 0~0.002 | ||||
| D | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| D1 | 2.300 - 2.600 | 0.091 - 0.102 | ||||
| E | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| E1 | 3.150 - 3.450 | 0.124 - 0.136 | ||||
| E2 | 1.535 - 1.935 | 0.060 - 0.076 | ||||
| b | 0.200 - 0.400 | 0.008 - 0.016 | ||||
| e | 0.550 - 0.750 | 0.022 - 0.030 | ||||
| L | 0.300 - 0.500 | 0.012 - 0.020 | ||||
| L1 | 0.180 - 0.480 | 0.007 - 0.019 | ||||
| L2 | 0~0.100 | 0~0.004 | ||||
| L3 | 0~0.100 | 0~0.004 | ||||
| H | 0.315 - 0.515 | 0.012 - 0.020 | ||||
| 9 - 13 | 9 - 13 | |||||
Note: The EAS test condition is VDD=-15V, VG=-10V, L=0.1mH, Rg=25
2504101957_Siliup-SP30P16NJ_C41355027.pdf
Related Products
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
