100V Power MOSFET Siliup SP010N01BGHTO featuring N Channel design and advanced split gate trench technology
Key Attributes
Model Number:
SP010N01BGHTO
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
370A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.1mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
39pF
Number:
1 N-channel
Output Capacitance(Coss):
2.335nF
Input Capacitance(Ciss):
14.658nF
Pd - Power Dissipation:
410W
Gate Charge(Qg):
208nC@10V
Mfr. Part #:
SP010N01BGHTO
Package:
TOLL-8L
Product Description
Siliup Semiconductor Technology Co. Ltd. SP010N01BGHTO 100V N-Channel Power MOSFET
The SP010N01BGHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching, low gate charge, and low Rdson, enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N01BGHTO
- Channel Type: N-Channel
- Package: TOLL
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (Tc=25) | ID | 370 | A | |
| Continuous Drain Current (Tc=100) | ID | 247 | A | |
| Pulsed Drain Current | IDM | 1480 | A | |
| Single Pulse Avalanche Energy | EAS | 2304 | mJ | |
| Power Dissipation (Tc=25) | PD | 410 | W | |
| Thermal Resistance Junction-to-Case | RJC | 0.3 | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 (Typ: 110) | V |
| Drain Cut-Off Current | IDSS | VDS=80V , VGS=0V , TJ=25 | 1 (Max) | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | 100 (Max) | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 to 4 (Typ: 3) | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=125A | 1.1 to 1.3 (Typ: 1.1) | m |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | 14658 (Typ) | pF |
| Output Capacitance | Coss | 2335 (Typ) | pF | |
| Reverse Transfer Capacitance | Crss | 39 (Typ) | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=125A | 208 (Typ) | nC |
| Gate-Source Charge | Qgs | 56 (Typ) | nC | |
| Gate-Drain Charge | Qg d | 37 (Typ) | nC | |
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V , RG=1.6, ID=125A | 25 (Typ) | nS |
| Rise Time | tr | 75 (Typ) | nS | |
| Turn-Off Delay Time | td(off) | 89 (Typ) | nS | |
| Fall Time | tf | 29 (Typ) | nS | |
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | 1.2 (Typ) | V |
| Maximum Body-Diode Continuous Current | IS | 370 | A | |
| Reverse Recovery Time | Trr | IS=100A, di/dt=100A/us, TJ=25 | 92 (Typ) | nS |
| Reverse Recovery Charge | Qrr | 302 (Typ) | nC |
Note: 1. The test condition is VDD=50V,VGS=10V,L=0.5mH,RG=25.
Order Information: Device SP010N01BGHTO, Package TOLL, Unit/Tape 2000.
Marking: 010N01BGH : Product code, * : Month code.
2509051708_Siliup-SP010N01BGHTO_C22385350.pdf
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