High Frequency 40V N Channel Power MOSFET Siliup SP40N01ABGNP with Split Gate Trench Technology and Low Rdson Performance
Key Attributes
Model Number:
SP40N01ABGNP
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
200A
RDS(on):
1.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
1 N-channel
Pd - Power Dissipation:
150W
Output Capacitance(Coss):
1.45nF
Gate Charge(Qg):
98nC@10V
Mfr. Part #:
SP40N01ABGNP
Package:
PDFN5X6-8L
Product Description
Product Overview
The SP40N01ABGNP is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology and a Cu-Clip process, this MOSFET offers fast switching, low gate charge, and low Rdson. It is designed for high-frequency applications and power management, including PWM applications and hard-switched circuits. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: Power MOSFET
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench Technology
- Process: Cu-Clip Process
- Testing: 100% Single Pulse Avalanche Energy Test
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 40 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 0.8 | 1 | m | |
| RDS(on)TYP | RDS(on) | @4.5V | 1.1 | 1.5 | m | |
| ID | ID | 200 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 40 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 200 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 135 | A | ||
| Pulsed Drain Current | IDM | 800 | A | |||
| Single Pulse Avalanche Energy | EAS | 756 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 150 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.83 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 | 1.7 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 0.8 | 1 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=20A | - | 1.1 | 1.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 6300 | - | pF |
| Output Capacitance | Coss | - | 1450 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 95 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=50A | - | 98 | - | nC |
| Gate-Source Charge | Qgs | - | 17 | - | nC | |
| Gate-Drain Charge | Qgd | - | 21 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V , VGS=10V , RG=1.6 ID=50A | - | 13.5 | - | nS |
| Rise Time | Tr | - | 35.8 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 66 | - | nS | |
| Fall Time | Tf | - | 24.8 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 200 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=200A/us, TJ=25 | - | 58 | - | nS |
| Reverse Recovery Charge | Qrr | - | 85 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions (mm) | Dimensions (inches) | Min. | Max. | Min. | Max. |
| A | 0.900 - 1.000 | 0.035 - 0.039 | ||||
| A3 | 0.254 REF. | 0.010 REF. | ||||
| D | 4.944 - 5.096 | 0.195 - 0.201 | ||||
| E | 5.974 - 6.126 | 0.235 - 0.241 | ||||
| D1 | 3.910 - 4.110 | 0.154 - 0.162 | ||||
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | ||||
| D2 | 4.824 - 4.976 | 0.190 - 0.196 | ||||
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | ||||
| k | 1.190 - 1.390 | 0.047 - 0.055 | ||||
| b | 0.350 - 0.450 | 0.014 - 0.018 | ||||
| e | 1.270 TYP. | 0.050 TYP. | ||||
| L | 0.559 - 0.711 | 0.022 - 0.028 | ||||
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | ||||
| H | 0.574 - 0.726 | 0.023 - 0.029 | ||||
| 10 - 12 | 10 - 12 | |||||
| Order Information | Package | Unit/Tape |
|---|---|---|
| SP40N01ABGNP | PDFN5X6-8L | 5000 |
| Marking | Device Code | Week Code |
|---|---|---|
| 40N01ABGP | :Device Code | :Week Code |
2504101957_Siliup-SP40N01ABGNP_C45351228.pdf
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